Atomically Resolved Mapping of Polarization and Electric Fields Across Ferroelectric/Oxide Interfaces by Z-contrast Imaging

被引：74

作者：

Chang, Hye Jung ^{[1
]}

Kalinin, Sergei V. ^{[1
]}

Morozovska, Anna N. ^{[2
]}

Huijben, Mark ^{[3
,4
,5
]}

Chu, Ying-Hao ^{[6
]}

Yu, Pu ^{[4
,5
]}

Ramesh, Ramamoorthy ^{[4
,5
]}

Eliseev, Evgeny A. ^{[2
]}

Svechnikov, George S. ^{[2
]}

Pennycook, Stephen J. ^{[1
]}

Borisevich, Albina Y. ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

[2] NAS Ukraine, V Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine

[3] Univ Twente, Fac Sci & Technol, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[4] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[5] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[6] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 21期

关键词：

PHYSICS; SCALE;

D O I：

10.1002/adma.201004641

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Direct atomic displacement mapping at ferroelectric interfaces by aberration corrected scanning transmission electron microscopy (STEM) (a-STEM image, b-corresponding displacement profile) is combined with the Landau-Ginsburg-Devonshire theory to obtain the complete interface electrostatics in real space, including separate estimates for the polarization and intrinsic interface charge contributions.

引用

页码：2474 / +

页数：7

共 38 条

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