Thermoelectric properties of Si0.8Ge0.2/Si multilayers

被引：4

作者：

Kato, H ^{[1
]}

Yamamoto, A ^{[1
]}

Takimoto, M ^{[1
]}

Ohta, T ^{[1
]}

Sakamoto, K ^{[1
]}

Miki, K ^{[1
]}

Whitlow, L ^{[1
]}

Kamisako, K ^{[1
]}

Matsui, T ^{[1
]}

机构：

[1] Nagoya Univ, Quantum Engn Dept, Chikusa Ku, Nagoya, Aichi 4640814, Japan

来源：

XVII INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT 98 | 1998年

关键词：

D O I：

10.1109/ICT.1998.740365

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

We produced Si0.8Ge0.2Si multilayers using MBE and evaluated the electrical properties. Si0.8Ge0.2 quantum wells with various well widths separated by 200 Angstrom Si barrier layers and also the samples with the same well/barrier width ratio were grown on high resistive Si(100) substrate with a 200 Angstrom buffer layer. Both well and barrier layer were uniformly boron-doped. The resistivity and Seebeck coefficient were measured at room temperature and showed a size effect in power factor, alpha (2)/rho, depending on the quantum well width.

引用

页码：253 / 256

页数：4