Composition control of long wavelength MBE HgCdTe using in-situ spectroscopic ellipsometry

被引：16

作者：

Edwall, D ^{[1
]}

Phillips, J ^{[1
]}

Lee, D ^{[1
]}

Arias, J ^{[1
]}

机构：

[1] Rockwell Int Corp, Ctr Sci, Thousand Oaks, CA 91360 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 06期

关键词：

HgCdTe; spectroscopic ellipsometry; MBE;

D O I：

10.1007/BF02665849

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Improved composition control of Hg1-xCdxTe layers grown by molecular beam epitaxy using in-situ spectroscopic ellipsometry is described. This has increased our composition yields from < 40% to approximately 70% for a specification of x to within 0.0015 of target composition. Knowledge of composition during growth also enables corrections to effusion cell temperatures so that the in-depth composition profile can be controlled. Further improvements were obtained after active composition control was implemented whereby the ellipsometer controls the Te cell temperature to maintain the desired composition.

引用

页码：643 / 646

页数：4

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