Features of the Conduction Mechanism through an Indium Antimonide Quantum Dot in the Analysis of Tunneling Current-Voltage Characteristics

被引：0

作者：

Vladimirovich, Gavrikov Maksim ^{[1
]}

Fedorovich, Kabanov Vladimir ^{[1
]}

Ivanovich, Mikhailov Aleksandr ^{[1
]}

机构：

[1] Saratov NG Chernyshevskii State Univ, Dept Nano & Biomed Technol, 83 Astrakhanskaya St, Saratov 410012, Russia

来源：

NANO HYBRIDS AND COMPOSITES | 2020年 / 28卷

基金：

俄罗斯基础研究基金会;

关键词：

quantum dots; indium antimonide; differential tunneling current-voltage characteristics; energy spectrum;

D O I：

10.4028/www.scientific.net/NHC.28.130

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The model representations of the mechanism of electronic conductivity through InSb nanoparticle was formulated and analyzed in accordance with the theory of field emission. Based on the analysis of tunneling current-voltage characteristics of various methods of calculation obtained a consistent value of characteristic size InSb nanoparticles in the range from 18 to 22 nm. Analysis tunneling current-voltage characteristics (dark and light (stationary light)) allowed us to evaluate the legitimacy of the formulated model representations.

引用

页码：130 / 135

页数：6

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