Hydrogen passivation of Ca acceptors in GaN

被引：39
作者：
Lee, JW
Pearton, SJ
Zolper, JC
Stall, RA
机构：
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
[2] EMCORE CORP,SOMERSET,NJ 08873
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 15期
关键词：
D O I：
10.1063/1.115598
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Exposure to a hydrogen plasma at 250 degrees C of p-type GaN (Ca) prepared by either Ca+ or Ca+ plus P+ co-implantation leads to a reduction in sheet carrier density of approximately an order of magnitude (1.6X10(12) cm(-2) to 1.8X10(11) cm(-2)), and an accompanying increase in hole mobility (6 cm(2)/V s to 18 cm(2)/V s). The passivation process can be reversed by posthydrogenation annealing at 400-500 degrees C under a N-2 ambient. This reactivation of the accepters is characteristic of the formation of neutral (Ca-H) complexes in the GaN. The thermal stability of the passivation is similar to that of Mg-H complexes in material prepared in the same manner (implantation) with similar initial doping levels. Hydrogen passivation of acceptor dopants in GaN appears to be a ubiquitous phenomenon, as it is in other p-type semiconductors. (C) 1996 American Institute of Physics.
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页码：2102 / 2104
页数：3
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