Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

被引：102

作者：

Liu, B. ^{[1
,2
]}

Zhang, R. ^{[1
,2
]}

Xie, Z. L. ^{[1
,2
]}

Liu, C. X. ^{[1
,2
]}

Kong, J. Y. ^{[1
,2
]}

Yao, J. ^{[1
,2
]}

Liu, Q. J. ^{[1
,2
]}

Zhang, Z. ^{[1
,2
]}

Fu, D. Y. ^{[1
,2
]}

Xiu, X. Q. ^{[1
,2
]}

Lu, H. ^{[1
,2
]}

Chen, P. ^{[1
,2
]}

Han, P. ^{[1
,2
]}

Gu, S. L. ^{[1
,2
]}

Shi, Y. ^{[1
,2
]}

Zheng, Y. D. ^{[1
,2
]}

Zhou, J. ^{[3
]}

Zhou, S. M. ^{[3
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Jiangsu Provincial Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 25期

基金：

高等学校博士学科点专项科研基金; 中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2825419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nonpolar m-plane (1 (1) over bar 00) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 mu W under a direct current of 20 mA for a 400x400 mu m(2) device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515-516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated. (c) 2007 American Institute of Physics.

引用

页数：3

共 21 条

[1] Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes [J].