Electric Field Induced Dissociation of SiC Thin Films Leading to the Formation of Nanocrystalline Graphite

Thin film Au-SiC-Cu and Au-SiC-Pt crossbar structures of 40 mu mx40 mu m size where all three layers are 100 nm thickness were fabricated by lithography. Decomposition of the SiC film is observed under the influence of an electric field (10(4)-10(6) V/cm) applied between the Au bottom electrode and the top metal electrode (Cu or Pt) for a few cycles during the course of testing as a resistive switching structure. This is evidenced using Raman mapping and Raman spectroscopy techniques. The Raman spectra reveal peaks corresponding to the D and G bands of nanocrystalline graphite. Raman mapping at different locations indicates that most of the graphite forms at the interface between the metal electrode and SiC. Raman mapping images reveal the formation of graphite on the surface. This technique is simple and enables site-selective localized growth of nanocrystalline graphite which is expected to impact many nanoscale applications. It could also be extended to form graphene at the nanoscale. [GRAPHICS] .