Electronic and Thermoelectric Transport Properties of Topological Insulator LiAuS

被引：3

作者：

Nisha ^{[1
]}

Kaur, Kulwinder ^{[2
]}

Thakur, Jyoti ^{[3
]}

Kashyap, Manish K. ^{[4
]}

Saini, Hardev S. ^{[1
]}

机构：

[1] Guru Jambheshwar Univ Sci & Technol, Dept Phys, Hisar 125001, Haryana, India

[2] IIT Madras, Condensed Matter Theory & Computat Lab, Dept Phys, Chennai 600036, Tamil Nadu, India

[3] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India

[4] Kurukshetra Univ, Dept Phys, Kurukshetra 136119, Haryana, India

来源：

DAE SOLID STATE PHYSICS SYMPOSIUM 2018 | 2019年 / 2115卷

关键词：

PERFORMANCE;

D O I：

10.1063/1.5113265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural, electronic and thermoelectric transport properties of topological Insulator (TI) LiAuS compound have been studied using first-principle calculation. In this work, we have employed full potential linearized augmented plane wave (FPLAPW) method as implemented in WIEN2k code and semi classical Boltzmann transport equations with constant relaxation time approximation. Our calculated results revealed that LiAuS is elastically and thermodynamically stable and ductile material. The negative value of band inversion strength gives indication about topologically nontrivial feature. The calculated values of Seebeck coefficient and power factor are 163.67 mu V/K & 1.20x10(12)W/msK(2), respectively. The value of figure of merit (ZT) at 1000K is 1.1 which makes LiAuS a potential candidate for thermoelectric application at high temperature.

引用

页数：4

共 13 条

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