Resonant photocurrent-spectroscopy of individual CdSe quantum dots

被引：2

作者：

Panfilova, M. ^{[1
]}

de Vasconcellos, S. Michaelis

Pawlis, A.

Lischka, K.

Zrenner, A.

机构：

[1] Univ Gesamthsch Paderborn, Dept Phys, D-33098 Paderborn, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 10期

关键词：

CdSe/ZnSe quantum dots; Photodiode; Quantum confined Stark Effect; Photocurrent; II-VI Semiconductors;

D O I：

10.1016/j.physe.2010.01.013

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Here we report on investigations on CdSe quantum dots incorporated in ZnSe based Schottky photodiodes with near-field shadow masks. Photoluminescence and photocurrent of individual quantum dots were studied as a function of the applied bias voltage. The exciton energy of the quantum dot ground state transition was shifted to the excitation energy by using the Stark effect tuning via an external bias voltage. Under the condition of resonance with the laser excitation energy we observed a resonant photocurrent signal due to the tunnelling of carriers out of the quantum dots at electric fields above 500 kV/cm. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2521 / 2523

页数：3

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