Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

被引：27

作者：

Song, Sannian ^{[1
]}

Yao, Dongning ^{[1
]}

Song, Zhitang ^{[1
]}

Gao, Lina ^{[2
]}

Zhang, Zhonghua ^{[1
]}

Li, Le ^{[1
]}

Shen, Lanlan ^{[1
]}

Wu, Liangcai ^{[1
]}

Liu, Bo ^{[1
]}

Cheng, Yan ^{[1
]}

Feng, Songlin ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Appl Phys, Div Nucl Mat Sci & Engn, Shanghai 201800, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2015年 / 10卷

基金：

中国国家自然科学基金;

关键词：

Phase-change memory; Atomic layer deposition; Microstructure; Electric properties; CHEMICAL-VAPOR-DEPOSITION;

D O I：

10.1186/s11671-015-0815-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge2Sb2Te5 (GST) and GeSb8Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH3)(2) N](4), Sb [(CH3)(2) N](3), Te(C4H9)(2) as precursors and plasma-activated H-2 gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb8Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb8Te films. These results show that ALD is an attractive method for preparation of phase-change materials.

引用

页码：1 / 5

页数：5

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