On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide

被引：56

作者：

Ohira, Kazuya ^{[1
]}

Kobayashi, Kentaro ^{[1
]}

Iizuka, Norio ^{[1
]}

Yoshida, Haruhiko ^{[1
]}

Ezaki, Mizunori ^{[1
]}

Uemura, Hiroshi ^{[2
]}

Kojima, Akihiro ^{[2
]}

Nakamura, Kenro ^{[2
]}

Furuyama, Hideto ^{[2
]}

Shibata, Hideki ^{[2
]}

机构：

[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

[2] Toshiba Co Ltd, Ctr Corp Res & Dev, Device Proc Dev Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 15期

关键词：

CHALLENGES; COMPACT;

D O I：

10.1364/OE.18.015440

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

On-chip integration of III-V laser diodes and photodetectors with silicon nanowire waveguides is demonstrated. Through flip-chip bonding of GaInNAs/GaAs laser diodes directly onto the silicon substrate, efficient heat dissipation was realized and characteristic temperatures as high as 132K were achieved. Spot-size converters for the laser-to-waveguide coupling were used, with efficiencies greater than 60%. The photodetectors were fabricated by bonding of InGaAs/InP wafers directly to silicon waveguides and formation of metal-semiconductor-metal structures, giving responsivities as high as 0.74 A/W. Both laser diode and the photodetector were integrated with a single silicon waveguide to demonstrate a complete on-chip optical transmission link. (C) 2010 Optical Society of America

引用

页码：15440 / 15447

页数：8

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