Controlling resonant tunneling in graphene via Fermi velocity engineering

被引：29

作者：

Lima, Jonas R. F. ^{[1
]}

Pereira, Luiz Felipe C. ^{[2
]}

Bezerra, C. G. ^{[2
]}

机构：

[1] Univ Fed Rural Pernambuco, Dept Fis, BR-52171900 Recife, PE, Brazil

[2] Univ Fed Rio Grande do Norte, Dept Fis Teor & Expt, BR-59078970 Natal, RN, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 24期

关键词：

NEGATIVE TRANSCONDUCTANCE; EPITAXIAL GRAPHENE; TRANSISTOR; SUPERLATTICES; CONDUCTANCE; POTENTIALS; BASE; GAPS;

D O I：

10.1063/1.4953865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the resonant tunneling in a single layer graphene superlattice with modulated energy gap and Fermi velocity via an effective Dirac-like Hamiltonian. We calculate the transmission coefficient with the transfer matrix method and analyze the effect of a Fermi velocity modulation on the electronic transmission, in the case of normal and oblique incidence. We find it is possible to manipulate the electronic transmission in graphene by Fermi velocity engineering, and show that it is possible to tune the transmitivity from 0 to 1. We also analyze how a Fermi velocity modulation influences the total conductance and the Fano factor. Our results are relevant for the development of novel graphene-based electronic devices. Published by AIP Publishing.

引用

页数：7

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