Fine-Pitch (≤10 μm) Direct Cu-Cu Interconnects using In-situ Formic Acid Vapor Treatment

被引：31

作者：

Jangam, SivaChandra ^{[1
]}

Bajwa, Adeel ^{[2
]}

Mogera, Umesh ^{[1
]}

Ambhore, Pranav ^{[1
]}

Colosimo, Tom ^{[2
]}

Chylak, Bob ^{[2
]}

Iyer, Subramanian S. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, CHIPS, Samueli Sch Engn, Los Angeles, CA 90024 USA

[2] Kulicke & Soffa Ind Inc, Ft Washington, MD USA

来源：

2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2019年

关键词：

Silicon-Interconnect Fabric; 10 mu m Fine Pitch Interconnects; Cu-Cu Thermal Compression Bonding;

D O I：

10.1109/ECTC.2019.00099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a solderless direct copper-copper (Cu-Cu) thermal compression bonding (TCB) process for die-to-wafer assembly in ambient environment using a novel in-situ formic acid vapor treatment. We show that this approach produces excellent Cu-Cu bonds with an average shear strength of >150 MPa. Using this TCB process, we demonstrate dielet assemblies on the Silicon-Interconnect Fabric (Si-IF) platform with fine-pitch (<= 10 mu m) Cu-Cu interconnects. Further, we show electrical continuity across multiple dies on the Si-IF with an interconnect specific contact resistance of <0.7 Omega-mu m(2).

引用

页码：620 / 627

页数：8

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