ZnO-Based Ultraviolet Photodetectors

被引：606
作者：
Liu, Kewei [1 ]
Sakurai, Makoto [1 ]
Aono, Masakazu [1 ]
机构：
[1] Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan
来源：
SENSORS | 2010年 / 10卷 / 09期
关键词：
ZnO; photodetector; MSM; p-n junction; Schottky; response; TRANSPARENT OXIDE SEMICONDUCTORS; MOLECULAR-BEAM-EPITAXY; PHOTOCONDUCTIVE DETECTOR; UV-DETECTOR; METAL PHOTODIODES; VISIBLE-BLIND; THIN-FILMS; FABRICATION; MGXZN1-XO; PHOTORESPONSE;
D O I：
10.3390/s100908604
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and make it feasible to prepare UV photodetectors with different cut-off wavelengths. ZnO-based photoconductors, Schottky photodiodes, metal-semiconductor-metal photodiodes and p-n junction photodetectors have been developed. In this work, it mainly focuses on the ZnO and ZnMgO films photodetectors. We analyze the performance of ZnO-based photodetectors, discussing recent achievements, and comparing the characteristics of the various photodetector structures developed to date.
引用
收藏
页码：8604 / 8634
页数：31
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