Electrodeposited polyaniline/Cu2ZnSnSe4 heterojunction

被引：2

作者：

Urazov, Kazhmukhan ^{[1
]}

Dergacheva, Margarita ^{[1
]}

Tameev, Alexey ^{[2
]}

Gribkova, Oxana ^{[2
]}

Mit, Konstantin ^{[3
]}

机构：

[1] DV Sokolsky Inst Fuel Catalysis & Electrochem, Alma Ata, Kazakhstan

[2] Frumkin Inst Phys Chem & Electrochem, Moscow, Russia

[3] Inst Phys Sci & Technol, Alma Ata, Kazakhstan

来源：

JOURNAL OF SOLID STATE ELECTROCHEMISTRY | 2021年 / 25卷 / 01期

关键词：

Electrodeposition; Polyaniline; CZTSe; Photoelectrochemistry; CU2ZNSNS4; THIN-FILMS; OPTICAL-PROPERTIES;

D O I：

10.1007/s10008-020-04801-0

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

One-step method for the electrodeposition of thin Cu2ZnSnSe4(CZTSe) film onto a polyaniline/FTO/glass substrate was developed. Polyaniline film was preliminary obtained also by electrochemical deposition onto the FTO/glass substrate. The nucleation of CZTSe in the course of the film formation on the polyaniline surface was studied by chronoamperometry method. This process can be described by the instantaneous crystallization model. According to SEM data, the films consist of 25-50 nm nanocrystals which can form large crystallites. Photocurrent was established to increase up to 20 times in the CZTSe/polyaniline/FTO/glass heterojunction in comparison with the polyaniline free structure. In the heterojunction, polyaniline acts as a hole transport layer improving the charge transfer to the FTO electrode and preventing circuit shorting because of porosity of the CZTSe film. Graphical abstract

引用

页码：237 / 245

页数：9

共 38 条

[1]

Abdulla HS, 2012, INT J ELECTROCHEM SC, V7, P10666

[2]

[Anonymous], 2009, MRS P, DOI DOI 10.1557/PROC-1165-M04-03

[3]

Bouroushian M, 2010, MONOGR ELECTROCHEM, P1, DOI 10.1007/978-3-642-03967-6

[4] Energy-Level Alignment at Organic/Metal and Organic/Organic Interfaces [J].

Braun, Slawomir ;

Salaneck, William R. ;

Fahlman, Mats .

ADVANCED MATERIALS, 2009, 21 (14-15) :1450-1472

[5] Transition between energy level alignment regimes at a low band gap polymer-electrode interfaces [J].

Crispin, Annica ;

Crispin, Xavier ;

Fahlman, Mats ;

Berggren, Magnus ;

Salaneck, William R. .

APPLIED PHYSICS LETTERS, 2006, 89 (21)

[6] Kesterite Inorganic-Organic Heterojunction for Solution Processable Solar Cells [J].

Data, P. ;

Bialoglowski, M. ;

Lyzwa, K. ;

Bacewicz, R. ;

Dluzewski, P. ;

Lapkowski, M. ;

Gregorkiewicz, T. ;

Podsiadlo, S. ;

Monkman, A. P. .

ELECTROCHIMICA ACTA, 2016, 201 :78-85

[7] Kesterite thin films for photovoltaics: a review [J].

Delbos, S. .

EPJ PHOTOVOLTAICS, 2012, 3

[8] Electrodeposition of thin Cu2ZnSnS4 films [J].

Dergacheva, M. B. ;

Urazov, K. A. ;

Nurtazina, A. E. .

RUSSIAN JOURNAL OF ELECTROCHEMISTRY, 2017, 53 (03) :324-332

[9] Electrodeposition of CuInxGa1-xSe2 thin films from sulfosalicylic acid [J].

Dergacheva, Margarita ;

Urazov, Kazhmukan .

ELECTROCHIMICA ACTA, 2013, 107 :120-125

[10] Raman scattering quantitative analysis of the anion chemical composition in kesterite Cu2ZnSn(SxSe1-x)4 solid solutions [J].

Dimitrievska, Mirjana ;

Gurieva, Galina ;

Xie, Haibing ;

Carrete, Alex ;

Cabot, Andreu ;

Saucedo, Edgardo ;

Perez-Rodriguez, Alejandro ;

Schorr, Susan ;

Izquierdo-Roca, Victor .

JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 628 :464-470

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