Quantitative carrier concentration profiling by scanning resonance tunneling spectroscopy

被引：0

作者：

Bolotov, L ^{[1
]}

Okui, T ^{[1
]}

Kanayama, T ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, MIRAI, Adv Semicond Res Ctr, Tsukuba, Ibaraki 3058562, Japan

来源：

CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005 | 2005年 / 788卷

关键词：

carrier profiling; resonance tunneling; scanning tunneling spectroscopy; p-n junction; silicon; fullerene film;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We investigated resonant electron tunneling peaks of individual C-60 molecules placed on oxidized silicon surfaces for uniform-doped wafers employing scanning tunneling microscopy and spectroscopy. Systematic increase of the C-60-derived resonance peak energy with decrease of boron concentration and with the position in the depletion region of lateral p-n junctions both indicate that the peak energy can be used for quantitative evaluation of carrier density with high spatial resolution. The observed peak energy variation is supported by a calculation within a one-dimensional tunnel diode model.

引用

页码：232 / 235

页数：4

共 12 条

[1] Scanning tunnelling spectroscopy of atomic clusters deposited on oxidized silicon surfaces: induced surface dipole and resonant electron injection [J].

Bolotov, L ;

Uchida, N ;

Kanayama, T .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (42) :S3065-S3081

[2] Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy [J].

De Wolf, P ;

Stephenson, R ;

Trenkler, T ;

Clarysse, T ;

Hantschel, T ;

Vandevorst, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01) :361-368

[3] Visualization of the depleted layer in nanoscaled pn junctions on Si(011) surfaces with the use of scanning tunneling microscopy [J].

Fukutome, H ;

Hasegawa, S ;

Takano, K ;

Nakashima, H ;

Aoyama, T ;

Arimoto, H .

APPLIED SURFACE SCIENCE, 1999, 144-45 :554-563

[4] THE SURFACE-STRUCTURE OF THE (110) ZONE OF TUNGSTEN - A LEED AND WORK FUNCTION STUDY [J].

GARDINER, TM ;

KRAMER, HM ;

BAUER, E .

SURFACE SCIENCE, 1981, 112 (1-2) :181-196

[5] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].

GARRETT, CGB ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1955, 99 (02) :376-387

[6] Physics of imaging p-n junctions by scanning tunneling microscopy and spectroscopy -: art. no. 165307 [J].

Jäger, ND ;

Marso, M ;

Salmeron, M ;

Weber, ER ;

Urban, K ;

Ebert, P .

PHYSICAL REVIEW B, 2003, 67 (16)

[7] Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy [J].

Liu, LQ ;

Yu, JX ;

Lyding, JW .

APPLIED PHYSICS LETTERS, 2001, 78 (03) :386-388

[8] Nanometer-scale Si-selective epitaxial growth using an ultrathin SiO2 mask [J].

Miyata, N ;

Watanabe, H ;

Ichikawa, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03) :978-982

[9] Visualization of 0.1-μm-metal-oxide-semiconductor field-effect transistors by cross-sectional scanning tunneling microscopy [J].

Okui, T ;

Hasegawa, S ;

Nakashima, H ;

Fukutome, H ;

Arimoto, H .

APPLIED PHYSICS LETTERS, 2002, 81 (13) :2475-2477

[10] Direct imaging of a biased p-n junction with conductance mapping [J].

Park, JY ;

Williams, ED ;

Phaneuf, RJ .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (06) :3745-3749

← 1 2 →