Large Magnetoresistance Effect in Epitaxial Co2Fe0.4Mn0.6Si/Ag/Co2Fe0.4Mn0.6Si Devices

被引：100

作者：

Sato, Jo ^{[1
]}

Oogane, Mikihiko ^{[1
]}

Naganuma, Hiroshi ^{[1
]}

Ando, Yasuo ^{[1
]}

机构：

[1] Tohoku Univ, Dept Appl Phys, Sendai, Miyagi 9808579, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 11期

关键词：

Compendex;

D O I：

10.1143/APEX.4.113005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with a Co2Fe0.4Mn0.6Si/Ag/Co2Fe0.4Mn0.6Si structure were fabricated. The bottom and top Co2Fe0.4Mn0.6Si layers had good crystallinity and an L2(1)-ordered structure. In addition, we found from scanning transmission electron microscopy (STEM) measurements that both Co2Fe0.4Mn0.6Si/Ag and Ag/Co2Fe0.4Mn0.6Si interfaces were very flat and sharp. The magnetoresistance (MR) ratio at room temperature was 74.8%, the largest to date for CPP-GMR devices. CPP-GMR devices with Co2Fe0.4Mn0.6Si electrodes would be very useful for the next generation of hard disk drive (HDD) read heads. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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