Scanned potential microscopy of edge and bulk currents in the quantum Hall regime

被引：109

作者：

McCormick, KL ^{[1
]}

Woodside, MT

Huang, M

Wu, MS

McEuen, PL

Duruoz, C

Harris, JS

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94309 USA

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.59.4654

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using an atomic force microscope as a local voltmeter, we measure the Hall voltage profile in a two-dimensional electron gas in the quantum Hall (QH) regime. We observe a linear profile in the bulk of the sample in the transition regions between QH plateaus and a distinctly nonlinear profile on the plateaus. In addition, localized voltage drops an observed at the sample edges in the transition regions. We interpret these results in terms of theories of edge and bulk current in the QH regime. [S0163-1829(99)02908-2].

引用

页码：4654 / 4657

页数：4

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