Electron and hole g factors and exchange interaction from studies of the exciton fine structure in In0.60Ga0.40As quantum dots

被引：394

作者：

Bayer, M ^{[1
]}

Kuther, A

Forchel, A

Gorbunov, A

Timofeev, VB

Schäfer, F

Reithmaier, JP

Reinecke, TL

Walck, SN

机构：

[1] Univ Wurzburg, D-97094 Wurzburg, Germany

[2] USN, Res Lab, Washington, DC 20375 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.82.1748

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Self-assembled In0.60Ga0.40As quantum dots (QD's) have been studied by single dot magnetophotoluminescence spectroscopy (B less than or equal to 8 T). At B = 0 a splitting of the exciton (X) emission is observed which we ascribe to an asymmetry of the confinement potential. With increasing B the emission splits into a quadruplet corresponding to the m = +/-2 and +/-1 X states, which originates from a reduction of the cubic symmetry of the QD's. From the spectroscopic data we obtain values for the electron (e) and hole (h) g factors. We also determine the X singlet-triplet splitting which is found to be enhanced over bulk values by about an order of magnitude due to the increase of the e-h overlap in the QD's.

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页码：1748 / 1751

页数：4

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