High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN

被引：190

作者：

Walker, D ^{[1
]}

Monroy, E

Kung, P

Wu, J

Hamilton, M

Sanchez, FJ

Diaz, J

Razeghi, M

机构：

[1] Northwestern Univ, Dept Elect Engn & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

[2] Univ Politecn Madrid, Dipartimento Ingn Elettron, Madrid 28015, Spain

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 05期

关键词：

D O I：

10.1063/1.123303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the fabrication and characterization of nonintentionally doped GaN and GaN:Mg Schottky metal-semiconductor-metal (MSM) photodetectors, grown on sapphire by metalorganic chemical vapor deposition. Low-leakage, Schottky contacts were made with Pt/Au. The devices are visible blind, with an ultraviolet/green contrast of about five orders of magnitude. The response times of the MSM devices were <10 ns and about 200 ns for GaN and GaN: Mg, respectively. The noise power spectral density remains below the background level of the system (10(-24) A(2)/Hz) up to 5 V, for the undoped GaN MSM detector. (C) 1999 American Institute of Physics. [S0003-6951(99)03005-3].

引用

页码：762 / 764

页数：3

共 11 条

[1] Comprehensive characterization of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN [J].

Carrano, JC ;

Li, T ;

Grudowski, PA ;

Eiting, CJ ;

Dupuis, RD ;

Campbell, JC .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6148-6160

[2] Schottky barrier detectors on GaN for visible-blind ultraviolet detection [J].

Chen, Q ;

Yang, JW ;

Osinsky, A ;

Gangopadhyay, S ;

Lim, B ;

Anwar, MZ ;

Khan, MA ;

Kuksenkov, D ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2277-2279

[3] Improvement of metal-semiconductor-metal GaN photoconductors [J].

Huang, ZC ;

Mott, DB ;

Shu, PK ;

Chen, JC ;

Wickenden, DK .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) :330-333

[4] Kinetics of photoconductivity in n-type GaN photodetector [J].

Kung, P ;

Zhang, X ;

Walker, D ;

Saxler, A ;

Piotrowski, J ;

Rogalski, A ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 1995, 67 (25) :3792-3794

[5]

KUNG P, 1998, SPIE P, V3287

[6] AlxGa1-xN:Si Schottky barrier photodiodes with fast response and high detectivity [J].

Monroy, E ;

Calle, F ;

Munoz, E ;

Omnes, F ;

Gibart, P ;

Munoz, JA .

APPLIED PHYSICS LETTERS, 1998, 73 (15) :2146-2148

[7] Photoconductor gain mechanisms in GaN ultraviolet detectors [J].

Munoz, E ;

Monroy, E ;

Garrido, JA ;

Izpura, I ;

Sanchez, FJ ;

SanchezGarcia, MA ;

Calleja, E ;

Beaumont, B ;

Gibart, P .

APPLIED PHYSICS LETTERS, 1997, 71 (07) :870-872

[8] Semiconductor ultraviolet detectors [J].

Razeghi, M ;

Rogalski, A .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7433-7473

[9] AlxGa1-xN (0<=x<=1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition. [J].

Walker, D ;

Zhang, X ;

Saxler, A ;

Kung, P ;

Xu, J ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 1997, 70 (08) :949-951

[10] Visible blind GaN p-i-n photodiodes [J].

Walker, D ;

Saxler, A ;

Kung, P ;

Zhang, X ;

Hamilton, M ;

Diaz, J ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 1998, 72 (25) :3303-3305

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