Demonstration of a tunable hybrid laser diode using an electrostatically tunable silicon micromachined Fabry-Perot interferometer device

被引：23
作者：
Sidorin, Y
Blomberg, M
Karioja, P
机构：
[1] Univ Arizona, Ctr Opt Sci, Opt Data Storage Ctr, Tucson, AZ 85721 USA
[2] VTT Elect, FIN-02044 Espoo, Finland
[3] Infotech Oulu, VTT Elect, FIN-90571 Oulu, Finland
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 01期
关键词：
butt-coupling; extremely short external cavity; tunable filters; tunable semiconductor lasers;
D O I：
10.1109/68.736376
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A previously reported silicon micromachined Fabry-Perot interferometer device is used for the first time with an edge-emitting single-quantum-wed high-power laser diode in an extremely short. external cavity configuration to realize a tunable laser diode. This hybrid configuration is advantageous in that it allows the use of "off-the-shelf" components, loose adjustment tolerances and potentially has low cost. In the current demonstration, external optical feedback from the extremely short-external-cavity, formed by such hybridization of the laser diode and the micro-optoelectro-mechanical device, resulted in a 4-nm range of quasi-continuous tuning with tens of milliwatts of output power.
引用
收藏
页码：18 / 20
页数：3
相关论文
共 12 条
[1]   ALUMINUM-FREE 980-NM GAINAS/GAINASP/GAINP PUMP LASERS [J].
ASONEN, H ;
OVTCHINNIKOV, A ;
ZHANG, GD ;
NAPPI, J ;
SAVOLAINEN, P ;
PESSA, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :415-423
[2]   Electrically tuneable micromachined Fabry-Perot interferometer in gas analysis [J].
Blomberg, M ;
Torkkeli, A ;
Lehto, A ;
Helenelund, C ;
Viitasalo, M .
PHYSICA SCRIPTA, 1997, T69 :119-121
[3]  
BLOMBERG M, 1996, Patent No. 5561523
[4]   SHORT-EXTERNAL-CAVITY MODULE FOR ENHANCED SINGLE-MODE TUNING OF INGAASP AND ALGAAS SEMICONDUCTOR DIODE-LASERS [J].
CASSIDY, DT ;
BRUCE, DM ;
VENTRUDO, BF .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1991, 62 (10) :2385-2388
[5]   Silicon-micromachined micromirrors with integrated high-precision actuators for external-cavity semiconductor lasers [J].
Kiang, MH ;
Solgaard, O ;
Muller, RS ;
Lau, RY .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (01) :95-97
[6]   Top-emitting micromechanical VCSEL with a 31.6-nm tuning range [J].
Li, MY ;
Yuen, W ;
Li, GS ;
Chang-Hasnain, CJ .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (01) :18-20
[7]   Quasi-continuous tuning range from 1560 to 1520nm in a GCSR laser, with high power and low tuning currents [J].
Rigole, PJ ;
Nilsson, S ;
Backbom, L ;
Stalnacke, B ;
Berglind, E ;
Weber, JP ;
Stoltz, B .
ELECTRONICS LETTERS, 1996, 32 (25) :2352-2354
[8]   Some characteristics of an extremely-short-external-cavity laser diode realized by butt coupling a Fabry-Perot laser diode to a single-mode optical fiber [J].
Sidorin, Y ;
Howe, D .
APPLIED OPTICS, 1998, 37 (15) :3256-3263
[9]   Laser-diode wavelength tuning based on butt coupling into an optical fiber [J].
Sidorin, Y ;
Howe, D .
OPTICS LETTERS, 1997, 22 (11) :802-804
[10]   Tunable laser diode using a nickel micromachined external mirror [J].
Uenishi, Y ;
Honma, K ;
Nagaoka, S .
ELECTRONICS LETTERS, 1996, 32 (13) :1207-1208
12