Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates

被引：23

作者：

Chu, Mu-Tao ^{[1
]}

Liao, Wen-Yih ^{[2
]}

Horng, Ray-Hua ^{[1
,3
]}

Tsai, Tsung-Yen ^{[4
]}

Wu, Tsai-Bau ^{[3
]}

Liu, Shu-Ping ^{[1
]}

Wu, Ming-Hsien ^{[2
]}

Lin, Ray-Ming ^{[5
]}

机构：

[1] Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 402, Taiwan

[2] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 301, Taiwan

[3] Natl Cheng Kung Univ, Dept Electroopt Engn, Tainan 701, Taiwan

[4] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 402, Taiwan

[5] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 07期

关键词：

Edge-dislocation density; InGaN solar cell; light absorption; patterned sapphire; IMBEDDED ELECTRODES; EFFICIENCY; DIODES;

D O I：

10.1109/LED.2011.2144954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, InGaN-based solar cells with a p-InGaN/i-InGaN/n-GaN double-heterojunction structure were fabricated and characterized. Two kinds of sapphire substrates [i.e., a conventional sapphire substrate (CSS) and a patterned sapphire substrate (PSS)] were used for epitaxial growth. Both the solar cells grown on the CSS and the PSS demonstrated a high open-circuit voltage of 2.05 and 2.08 V, respectively. However, the short-circuit current of the solar cells grown on the PSS showed an improvement of 27.6% compared with that of the cells grown on the CSS. Such observation could be attributed to low edge-dislocation density and the increase in the light-absorption path by the scattering of interface incident light between the substrate and the epitaxial layer for the solar cell grown on the PSS.

引用

页码：922 / 924

页数：3

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