Modulation of N-bonding configurations and their influence on the electrical properties of nitrogen-doped graphene

被引：11

作者：

Wang, Zegao ^{[1
,2
,3
]}

Chen, Yuanfu ^{[1
]}

Li, Pingjian ^{[1
]}

Zhou, Jinhao ^{[1
]}

He, Jiarui ^{[1
]}

Zhang, Wanli ^{[1
]}

Guo, Zheng ^{[3
]}

Li, Yanrong ^{[1
]}

Dong, Mingdong ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[2] Aarhus Univ, Interdisciplinary Nanosci Ctr iNANO, DK-8000 Aarhus C, Denmark

[3] Aarhus Univ, Dept Engn, DK-8000 Aarhus C, Denmark

来源：

RSC ADVANCES | 2016年 / 6卷 / 95期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

VAPOR-DEPOSITION GROWTH; MONOLAYER GRAPHENE; LAYER GRAPHENE; HYDROGEN; CARBON; TRANSPORT; DOPANTS; OXIDE;

D O I：

10.1039/c6ra19278e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nitrogen-doped graphene (NG) films have been grown on Cu foils by using imidazole (C3H4N2) and PMMA as solid N and C sources. The results show that the pyridinic and pyrrolic nitrogen-bonding configurations and the N doping concentration can be effectively modulated by the hydrogen flux. In addition, it reveals that the defect density of the NG film is dominated by the pyridinic-N configuration instead of the pyrrolic-N configuration from the Raman spectra. Furthermore, from the electrical measurements, it is concluded that the pyrrolic-N configuration has stronger donor ability, and lower carrier scattering than those of pyridinic-N configuration. This study provides fundamental insights to understand the role of various N-bonding configurations, but also give guidance to synthesize the NG with controllable N-bonding configurations.

引用

页码：92682 / 92687

页数：6

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