Unraveling Heat Transport and Dissipation in Suspended MoSe2 from Bulk to Monolayer

被引:20
|
作者
Reig, David Saleta [1 ,2 ]
Varghese, Sebin [1 ,2 ]
Farris, Roberta [1 ,2 ]
Block, Alexander [1 ,2 ]
Mehew, Jake D. [1 ,2 ]
Hellman, Olle [3 ]
Wozniak, Pawel [4 ]
Sledzinska, Marianna [1 ,2 ]
El Sachat, Alexandros [1 ,2 ]
Chavez-Angel, Emigdio [1 ,2 ]
Valenzuela, Sergio O. [1 ,2 ,5 ]
van Hulst, Niek F. [4 ,5 ]
Ordejon, Pablo [1 ,2 ]
Zanolli, Zeila [6 ,7 ]
Torres, Clivia M. Sotomayor [1 ,2 ,5 ]
Verstraete, Matthieu J. [8 ,9 ]
Tielrooij, Klaas-Jan [1 ,2 ]
机构
[1] BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain
[2] CSIC, Campus UAB, Barcelona 08193, Spain
[3] Weizmann Inst Sci, Dept Mol Chem & Mat Sci, IL-76100 Rehovot, Israel
[4] ICFO Inst Ciencies Foton, Mediterranean Technol Pk, Barcelona 08860, Spain
[5] ICREA, Pg Llufs Companys 23, Barcelona 08010, Spain
[6] Univ Utrecht, Debye Inst Nanomat Sci, Chem Dept, Utrecht, Netherlands
[7] Univ Utrecht, Debye Inst Nanomat Sci, ETSF, Utrecht, Netherlands
[8] Univ Liege, Nanomat, CESAM, Q Mat, B-4000 Liege, Belgium
[9] Univ Liege, European Theoret Spect Facil, B-4000 Liege, Belgium
基金
欧盟地平线“2020”; 欧洲研究理事会; 瑞典研究理事会;
关键词
2D materials; ab initio; heat transport; Raman thermometry; transition metal dichalcogenides; THERMAL-CONDUCTIVITY; RAMAN;
D O I
10.1002/adma.202108352
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Understanding heat flow in layered transition metal dichalcogenide (TMD) crystals is crucial for applications exploiting these materials. Despite significant efforts, several basic thermal transport properties of TMDs are currently not well understood, in particular how transport is affected by material thickness and the material's environment. This combined experimental-theoretical study establishes a unifying physical picture of the intrinsic lattice thermal conductivity of the representative TMD MoSe2. Thermal conductivity measurements using Raman thermometry on a large set of clean, crystalline, suspended crystals with systematically varied thickness are combined with ab initio simulations with phonons at finite temperature. The results show that phonon dispersions and lifetimes change strongly with thickness, yet the thinnest TMD films exhibit an in-plane thermal conductivity that is only marginally smaller than that of bulk crystals. This is the result of compensating phonon contributions, in particular heat-carrying modes around approximate to 0.1 THz in (sub)nanometer thin films, with a surprisingly long mean free path of several micrometers. This behavior arises directly from the layered nature of the material. Furthermore, out-of-plane heat dissipation to air molecules is remarkably efficient, in particular for the thinnest crystals, increasing the apparent thermal conductivity of monolayer MoSe2 by an order of magnitude. These results are crucial for the design of (flexible) TMD-based (opto-)electronic applications.
引用
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页数:9
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