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- [1] Fabrication and characterization of large-area suspended MoSe2 crystals down to the monolayerJOURNAL OF PHYSICS-MATERIALS, 2021, 4 (04):Varghese, Sebin论文数: 0 引用数: 0 h-index: 0机构: BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain CSIC, Campus UAB, Barcelona 08193, Spain BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainReig, David Saleta论文数: 0 引用数: 0 h-index: 0机构: BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain CSIC, Campus UAB, Barcelona 08193, Spain BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainMehew, Jake Dudley论文数: 0 引用数: 0 h-index: 0机构: BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain CSIC, Campus UAB, Barcelona 08193, Spain BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainBlock, Alexander论文数: 0 引用数: 0 h-index: 0机构: BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain CSIC, Campus UAB, Barcelona 08193, Spain BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainEl Sachat, Alexandros论文数: 0 引用数: 0 h-index: 0机构: BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain CSIC, Campus UAB, Barcelona 08193, Spain BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainChavez-Angel, Emigdio论文数: 0 引用数: 0 h-index: 0机构: BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain CSIC, Campus UAB, Barcelona 08193, Spain BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainSledzinska, Marianna论文数: 0 引用数: 0 h-index: 0机构: BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain CSIC, Campus UAB, Barcelona 08193, Spain BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainBallesteros, Belen论文数: 0 引用数: 0 h-index: 0机构: BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain CSIC, Campus UAB, Barcelona 08193, Spain BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainTorres, Clivia M. Sotomayor论文数: 0 引用数: 0 h-index: 0机构: BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain CSIC, Campus UAB, Barcelona 08193, Spain ICREA, Pg Lluis Companys 23, Barcelona 08010, Spain BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainTielrooij, Klaas-Jan论文数: 0 引用数: 0 h-index: 0机构: BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain CSIC, Campus UAB, Barcelona 08193, Spain BIST, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain
- [2] Exciton band structure in layered MoSe2: from a monolayer to the bulk limitNANOSCALE, 2015, 7 (48) : 20769 - 20775Arora, Ashish论文数: 0 引用数: 0 h-index: 0机构: CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, F-38042 Grenoble, France CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, F-38042 Grenoble, FranceNogajewski, Karol论文数: 0 引用数: 0 h-index: 0机构: CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, F-38042 Grenoble, France CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, F-38042 Grenoble, FranceMolas, Maciej论文数: 0 引用数: 0 h-index: 0机构: CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, F-38042 Grenoble, France Univ Warsaw, Fac Phys, Inst Expt Phys, PL-02093 Warsaw, Poland CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, F-38042 Grenoble, FranceKoperski, Maciej论文数: 0 引用数: 0 h-index: 0机构: CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, F-38042 Grenoble, France Univ Warsaw, Fac Phys, Inst Expt Phys, PL-02093 Warsaw, Poland CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, F-38042 Grenoble, FrancePotemski, Marek论文数: 0 引用数: 0 h-index: 0机构: CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, F-38042 Grenoble, France CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, F-38042 Grenoble, France
- [3] How high is a MoSe2 monolayer?NANOTECHNOLOGY, 2022, 33 (12)Cowie, Megan论文数: 0 引用数: 0 h-index: 0机构: McGill Univ, Dept Phys, 3600 Rue Univ, Montreal, PQ H3A 2T8, Canada McGill Univ, Dept Phys, 3600 Rue Univ, Montreal, PQ H3A 2T8, CanadaPlougmann, Rikke论文数: 0 引用数: 0 h-index: 0机构: McGill Univ, Dept Phys, 3600 Rue Univ, Montreal, PQ H3A 2T8, Canada Tech Univ Denmark, Dept Phys, Fysikvej,Bldg 311, DK-2800 Lyngby, Denmark McGill Univ, Dept Phys, 3600 Rue Univ, Montreal, PQ H3A 2T8, CanadaBenkirane, Yacine论文数: 0 引用数: 0 h-index: 0机构: McGill Univ, Dept Phys, 3600 Rue Univ, Montreal, PQ H3A 2T8, Canada McGill Univ, Dept Phys, 3600 Rue Univ, Montreal, PQ H3A 2T8, CanadaSchue, Leonard论文数: 0 引用数: 0 h-index: 0机构: Univ Montreal, Dept Chim, CP 6128,Succursale Ctr Ville, Montreal, PQ H3C 3J7, Canada Univ Montreal, Regrp Quebecois Sur Mat Pointe RQMP, CP 6128,Succursale Ctr Ville, Montreal, PQ H3C 3J7, Canada McGill Univ, Dept Phys, 3600 Rue Univ, Montreal, PQ H3A 2T8, CanadaSchumacher, Zeno论文数: 0 引用数: 0 h-index: 0机构: McGill Univ, Dept Phys, 3600 Rue Univ, Montreal, PQ H3A 2T8, Canada Swiss Fed Inst Technol, Inst Quantum Elect, Auguste Piccard Hof 1, CH-8093 Zurich, Switzerland McGill Univ, Dept Phys, 3600 Rue Univ, Montreal, PQ H3A 2T8, CanadaGrutter, Peter论文数: 0 引用数: 0 h-index: 0机构: McGill Univ, Dept Phys, 3600 Rue Univ, Montreal, PQ H3A 2T8, Canada McGill Univ, Dept Phys, 3600 Rue Univ, Montreal, PQ H3A 2T8, Canada
- [4] Influence of defects and doping on phonon transport properties of monolayer MoSe22D MATERIALS, 2018, 5 (03):Yan, Zhequan论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USA Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USAYoon, Mina论文数: 0 引用数: 0 h-index: 0机构: Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN USA Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37916 USA Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USAKumar, Satish论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USA Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
- [5] Epitaxial growth of monolayer MoSe2 on GaAsAPPLIED PHYSICS EXPRESS, 2016, 9 (11)Onomitsu, Koji论文数: 0 引用数: 0 h-index: 0机构: NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, JapanKrajewska, Aleksandra论文数: 0 引用数: 0 h-index: 0机构: NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, JapanNeufeld, Ryan A. E.论文数: 0 引用数: 0 h-index: 0机构: NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, JapanMaeda, Fumihiko论文数: 0 引用数: 0 h-index: 0机构: NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan Fukuoka Inst Technol, Dept Informat Elect, Fukuoka 8110295, Japan NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, JapanKumakura, Kazuhide论文数: 0 引用数: 0 h-index: 0机构: NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, JapanYamamoto, Hideki论文数: 0 引用数: 0 h-index: 0机构: NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
- [6] Nonlinear optical characteristics of monolayer MoSe2ANNALEN DER PHYSIK, 2016, 528 (7-8) : 551 - 559Le, Chinh Tam论文数: 0 引用数: 0 h-index: 0机构: Univ Ulsan, Dept Phys, Ulsan 44610, South Korea Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 44610, South Korea Univ Ulsan, Dept Phys, Ulsan 44610, South KoreaClark, Daniel J.论文数: 0 引用数: 0 h-index: 0机构: SUNY Binghamton, Dept Phys Appl Phys & Astron, Binghamton, NY 13902 USA Univ Ulsan, Dept Phys, Ulsan 44610, South KoreaUllah, Farman论文数: 0 引用数: 0 h-index: 0机构: Univ Ulsan, Dept Phys, Ulsan 44610, South Korea Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 44610, South Korea Univ Ulsan, Dept Phys, Ulsan 44610, South KoreaSenthilkumar, Velusamy论文数: 0 引用数: 0 h-index: 0机构: Univ Ulsan, Dept Phys, Ulsan 44610, South Korea Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 44610, South Korea Univ Ulsan, Dept Phys, Ulsan 44610, South KoreaJang, Joon I.论文数: 0 引用数: 0 h-index: 0机构: SUNY Binghamton, Dept Phys Appl Phys & Astron, Binghamton, NY 13902 USA Univ Ulsan, Dept Phys, Ulsan 44610, South KoreaSim, Yumin论文数: 0 引用数: 0 h-index: 0机构: Chung Ang Univ, Dept Phys, Seoul 06794, South Korea Univ Ulsan, Dept Phys, Ulsan 44610, South KoreaSeong, Maeng-Je论文数: 0 引用数: 0 h-index: 0机构: Chung Ang Univ, Dept Phys, Seoul 06794, South Korea Univ Ulsan, Dept Phys, Ulsan 44610, South KoreaChung, Koo-Hyun论文数: 0 引用数: 0 h-index: 0机构: Univ Ulsan, Sch Mech Engn, Ulsan 44610, South Korea Univ Ulsan, Dept Phys, Ulsan 44610, South KoreaPark, Hyoyeol论文数: 0 引用数: 0 h-index: 0机构: Ulsan Coll, Elect Commun & Semicond Applicat Dept, Ulsan 44610, South Korea Univ Ulsan, Dept Phys, Ulsan 44610, South KoreaKim, Yong Soo论文数: 0 引用数: 0 h-index: 0机构: Univ Ulsan, Dept Phys, Ulsan 44610, South Korea Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 44610, South Korea Univ Ulsan, Dept Phys, Ulsan 44610, South Korea
- [7] A First-Principles Study of Phonon Transport Properties of Monolayer MoSe2PROCEEDINGS OF THE SIXTEENTH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS ITHERM 2017, 2017, : 143 - 148Yan, Zhequan论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USA Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USAYoon, Mina论文数: 0 引用数: 0 h-index: 0机构: Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN USA Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USAKumar, Satish论文数: 0 引用数: 0 h-index: 0机构: Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USA Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
- [8] Temperature Dependence of the Dielectric Function of Monolayer MoSe2SCIENTIFIC REPORTS, 2018, 8Park, Han Gyeol论文数: 0 引用数: 0 h-index: 0机构: Kyung Hee Univ, Dept Phys, Seoul 02447, South Korea Kyung Hee Univ, Dept Phys, Seoul 02447, South KoreaKim, Tae Jung论文数: 0 引用数: 0 h-index: 0机构: Kyung Hee Univ, Ctr Converging Humanities, Seoul 02447, South Korea Kyung Hee Univ, Dept Phys, Seoul 02447, South KoreaUllah, Farman论文数: 0 引用数: 0 h-index: 0机构: Univ Ulsan, Dept Phys, Ulsan 44610, South Korea Univ Ulsan, EHSRC, Ulsan 44610, South Korea Kyung Hee Univ, Dept Phys, Seoul 02447, South KoreaVan Long Le论文数: 0 引用数: 0 h-index: 0机构: Kyung Hee Univ, Dept Phys, Seoul 02447, South Korea Kyung Hee Univ, Dept Phys, Seoul 02447, South KoreaHoang Tung Nguyen论文数: 0 引用数: 0 h-index: 0机构: Kyung Hee Univ, Dept Phys, Seoul 02447, South Korea Kyung Hee Univ, Dept Phys, Seoul 02447, South KoreaKim, Yong Soo论文数: 0 引用数: 0 h-index: 0机构: Univ Ulsan, Dept Phys, Ulsan 44610, South Korea Univ Ulsan, EHSRC, Ulsan 44610, South Korea Kyung Hee Univ, Dept Phys, Seoul 02447, South KoreaKim, Young Dong论文数: 0 引用数: 0 h-index: 0机构: Kyung Hee Univ, Dept Phys, Seoul 02447, South Korea Kyung Hee Univ, Dept Phys, Seoul 02447, South Korea
- [9] A Shallow Acceptor of Phosphorous Doped in MoSe2 MonolayerADVANCED ELECTRONIC MATERIALS, 2020, 6 (01):Xia, Yipu论文数: 0 引用数: 0 h-index: 0机构: Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R China Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R ChinaZhang, Junqiu论文数: 0 引用数: 0 h-index: 0机构: Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R China Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R ChinaYu, Zhoubin论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon Mat, Sch Mat & Engn, Hangzhou 310027, Zhejiang, Peoples R China Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R ChinaJin, Yuanjun论文数: 0 引用数: 0 h-index: 0机构: Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R China Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R ChinaTian, Hao论文数: 0 引用数: 0 h-index: 0机构: Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R China Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R ChinaFeng, Yue论文数: 0 引用数: 0 h-index: 0机构: Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R ChinaLi, Bin论文数: 0 引用数: 0 h-index: 0机构: Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R ChinaHo, Wingkin论文数: 0 引用数: 0 h-index: 0机构: Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R China Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R ChinaLiu, Chang论文数: 0 引用数: 0 h-index: 0机构: Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R ChinaXu, Hu论文数: 0 引用数: 0 h-index: 0机构: Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R ChinaJin, Chuanhong论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, State Key Lab Silicon Mat, Sch Mat & Engn, Hangzhou 310027, Zhejiang, Peoples R China Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R ChinaXie, Maohai论文数: 0 引用数: 0 h-index: 0机构: Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R China Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R China
- [10] Thermal transport properties of MoS2 and MoSe2 monolayersNANOTECHNOLOGY, 2016, 27 (05)Kandemir, Ali论文数: 0 引用数: 0 h-index: 0机构: Anadolu Univ, Dept Mat Sci & Engn, Fac Engn, TR-26555 Eskisehir, Turkey Izmir Inst Technol, Dept Mat Sci & Engn, TR-35430 Izmir, Turkey Anadolu Univ, Dept Mat Sci & Engn, Fac Engn, TR-26555 Eskisehir, TurkeyYapicioglu, Haluk论文数: 0 引用数: 0 h-index: 0机构: Anadolu Univ, Dept Ind Engn, Fac Engn, TR-26555 Eskisehir, Turkey Anadolu Univ, Dept Mat Sci & Engn, Fac Engn, TR-26555 Eskisehir, TurkeyKinaci, Alper论文数: 0 引用数: 0 h-index: 0机构: Argonne Natl Lab, Ctr Nanoscale Mat, Lemont, IL 60439 USA Anadolu Univ, Dept Mat Sci & Engn, Fac Engn, TR-26555 Eskisehir, TurkeyCagin, Tahir论文数: 0 引用数: 0 h-index: 0机构: Texas A&M Univ, Artie McFerrin Dept Chem Engn & Mat Sci & Engn, College Stn, TX 77845 USA Anadolu Univ, Dept Mat Sci & Engn, Fac Engn, TR-26555 Eskisehir, TurkeySevik, Cem论文数: 0 引用数: 0 h-index: 0机构: Anadolu Univ, Dept Mech Engn, Fac Engn, TR-26555 Eskisehir, Turkey Anadolu Univ, Dept Mat Sci & Engn, Fac Engn, TR-26555 Eskisehir, Turkey