Energy storage properties and relaxor behavior of lead-free Ba1-xSm2x/3Zr0.15Ti0.85O3 ceramics

被引:65
作者
Sun, Zheng [1 ,2 ]
Li, Lingxia [1 ,2 ]
Yu, Shihui [1 ,2 ]
Kang, Xinyu [3 ]
Chen, Siliang [1 ,2 ]
机构
[1] Minist Educ, Sch Microelect, Tianjin 300072, Peoples R China
[2] Minist Educ, Key Lab Adv Ceram & Machining Technol, Tianjin 300072, Peoples R China
[3] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金;
关键词
FERROELECTRIC CERAMICS; SINTERING TEMPERATURE; DIELECTRIC-PROPERTIES; DENSITY; LA; MICROSTRUCTURE; MODEL; STATE; SR;
D O I
10.1039/c7dt03140h
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Lead-free Ba1-xSm2x/3Zr0.15Ti0.85O3 (BSZT) ceramics were synthesized by a solid state reaction route. The microstructure, dielectric relaxor behavior and energy storage properties of BSZT ceramics were studied. The growth of grain size was suppressed with the increase of Sm addition and kept in the sub-micrometer scale. Successive substitution of Sm3+ for Ba2+ disrupted the long-range dipole and promoted the increase of polar nano-region (PNR) size, resulting in the enhanced degree of relaxor behavior. The increasing PNR size also lead to the slimmer hysteresis loops and improved the energy storage efficiency. Furthermore, high saturated polarization (P-max) and low remnant polarization (P-r) were obtained due to the formation of defect dipoles, which facilitated the switch of PNRs and contributed to the enhancement of energy storage density. The x = 0.003 sample was found to exhibit a higher energy storage density of 1.15 J cm(-3) and an energy storage efficiency of 92%. The result revealed that the BSZT ceramics may be a good candidate for energy storage application.
引用
收藏
页码:14341 / 14347
页数:7
相关论文
共 54 条
[1]   ENERGY STORAGE IN CERAMIC DIELECTRICS [J].
BURN, I ;
SMYTH, DM .
JOURNAL OF MATERIALS SCIENCE, 1972, 7 (03) :339-&
[2]   La2O3 modified 0.4(Ba0.8Ca0.2)TiO3-0.6Bi(Mg0.5Ti0.5)O3 ceramics for high-temperature capacitor applications [J].
Chen, Zhi ;
Li, Guizhong ;
Sun, Xiaojun ;
Liu, Laijun ;
Fang, Liang .
CERAMICS INTERNATIONAL, 2015, 41 (09) :11057-11061
[3]   Relaxor behavior of (Ba, Bi)(Ti, Al)O3 ferroelectric ceramic [J].
Cui, Lei ;
Hou, Yu-Dong ;
Wang, Sai ;
Wang, Chao ;
Zhu, Man-Kang .
JOURNAL OF APPLIED PHYSICS, 2010, 107 (05)
[4]   Phase structure, dielectric properties, and relaxor behavior of (K0.5Na0.5)NbO3-(Ba0.5Sr0.5)TiO3 lead-free solid solution for high temperature applications [J].
Du, Hongliang ;
Zhou, Wancheng ;
Luo, Fa ;
Zhu, Dongmei ;
Qu, Shaobo ;
Pei, Zhibin .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
[5]   Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering [J].
Ge, Jun ;
Remiens, Denis ;
Dong, Xianlin ;
Chen, Ying ;
Costecalde, Jean ;
Gao, Feng ;
Cao, Fei ;
Wang, Genshui .
APPLIED PHYSICS LETTERS, 2014, 105 (11)
[6]   Reassessment of the Burns temperature and its relationship to the diffuse scattering, lattice dynamics, and thermal expansion in relaxor Pb(Mg1/3Nb2/3)O3 [J].
Gehring, P. M. ;
Hiraka, H. ;
Stock, C. ;
Lee, S. -H. ;
Chen, W. ;
Ye, Z. -G. ;
Vakhrushev, S. B. ;
Chowdhuri, Z. .
PHYSICAL REVIEW B, 2009, 79 (22)
[7]   Structural and dielectric relaxor properties of A-site deficient samarium-doped (Ba1-x Sm2x/3)(Zr0.3Ti0.7O3) ceramics [J].
Ghosh, S. K. ;
Ganguly, M. ;
Rout, S. K. ;
Sinha, T. P. .
JOURNAL OF MATERIALS SCIENCE, 2014, 49 (15) :5441-5453
[8]   Ferroelectric ceramics: History and technology [J].
Haertling, GH .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1999, 82 (04) :797-818
[9]   A systematic modification of the large electrocaloric effect within a broad temperature range in rare-earth doped BaTiO3 ceramics [J].
Han, Fei ;
Bai, Yang ;
Qiao, Li-Jie ;
Guo, Dong .
JOURNAL OF MATERIALS CHEMISTRY C, 2016, 4 (09) :1842-1849
[10]   Effect of Zr:Sn ratio in the lead lanthanum zirconate stannate titanate anti-ferroelectric ceramics on energy storage properties [J].
Jiang, Shenglin ;
Zhang, Ling ;
Zhang, Guangzu ;
Liu, Sisi ;
Yi, Jinqiao ;
Xiong, Xue ;
Yu, Yan ;
He, Jungang ;
Zeng, Yike .
CERAMICS INTERNATIONAL, 2013, 39 (05) :5571-5575