Free carrier absorption in self-activated PbWO4 and Ce-doped Y3(Al0.25Ga0.75)3O12 and Gd3Al2Ga3O12 garnet scintillators

被引：12
作者：
Auffray, E. [1 ]
Korjik, M. [2 ]
Lucchini, M. T. [1 ]
Nargelas, S. [3 ,4 ]
Sidletskiy, O. [5 ]
Tamulaitis, G. [3 ,4 ]
Tratsiak, Y. [6 ]
Vaitkevicius, A. [3 ,4 ]
机构：
[1] CERN, Geneva, Switzerland
[2] Belarusian State Univ, Res Inst Nucl Problems, Bobruiskaya Str 11, Minsk, BELARUS
[3] Vilnius Univ, Semicond Phys Dept, Univ Str 3, Vilnius, Lithuania
[4] Vilnius Univ, Inst Appl Res, Univ Str 3, Vilnius, Lithuania
[5] Inst Scintillat Mat, Lenin Av 60, Kharkov, Ukraine
[6] Belarusian State Univ, Res Inst Chem Problems, Leningradskaya Str 14, Minsk, BELARUS
来源：
OPTICAL MATERIALS | 2016年 / 58卷
基金：
欧盟地平线“2020”;
关键词：
Scintillators; Free carrier absorption; Lead tungstate; Ceriumdoped; Garnets; SINGLE-CRYSTAL; TIME;
D O I：
10.1016/j.optmat.2016.06.040
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nonequilibrium carrier dynamics in the scintillators prospective for fast timing in high energy physics and medical imaging applications was studied. The time-resolved free carrier absorption investigation was carried out to study the dynamics of nonequilibrium carriers in wide-band-gap scintillation materials: self-activated led tungstate (PbWO4, PWO) ant two garnet crystals, GAGG:Ce and YAGG:Ce. It was shown that free electrons appear in the conduction band of PWO and YAGG:Ce crystals within a sub picosecond time scale, while the free holes in GAGG:Ce appear due to delocalization from Gd3+ ground states to the valence band within a few picoseconds after short-pulse excitation. The influence of Gd ions on the nonequilibrium carrier dynamics is discussed on the base of comparison the results of the free carrier absorption in GAGG:Ce containing gadolinium and in YAGG without Gd in the host lattice. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：461 / 465
页数：5
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