Design and Analysis of Heavily Doped n+ Pocket Asymmetrical Junction-Less Double Gate MOSFET for Biomedical Applications

The Complementary Metal-Oxide Semiconductor (CMOS) technology has evolved to a great extent and is being used for different applications like environmental, biomedical, radiofrequency and switching, etc. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based biosensors are used for detecting various enzymes, molecules, pathogens and antigens efficiently with a less time-consuming process involved in comparison to other options. Early-stage detection of disease is easily possible using Field-Effect Transistor (FET) based biosensors. In this paper, a steep subthreshold heavily doped n(+) pocket asymmetrical junctionless MOSFET is designed for biomedical applications by introducing a nanogap cavity region at the gate-oxide interface. The nanogap cavity region is introduced in such a manner that it is sensitive to variation in biomolecules present in the cavity region. The analysis is based on dielectric modulation or changes due to variation in the bio-molecules present in the environment or the human body. The analysis of proposed asymmetrical junctionless MOSFET with nanogap cavity region is carried out with different dielectric materials and variations in cavity length and height inside the gate-oxide interface. Further, this device also showed significant variation for changes in different introduced charged particles or region materials, as simulated through a 2D visual Technology Computer-Aided Design (TCAD) device simulator.