Novel concepts in functional resistive switching memories

被引:59
|
作者
Qian, Kai [1 ]
Viet Cuong Nguyen [1 ]
Chen, Tupei [2 ]
Lee, Pooi See [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore
基金
新加坡国家研究基金会;
关键词
NONVOLATILE MEMORY; HIGH-PERFORMANCE; ORGANIC MEMORY; THIN-FILM; TRANSPARENT ELECTRONICS; GOLD NANOPARTICLES; ACTIVE ELEMENTS; SILICON-OXIDE; DEVICES; GRAPHENE;
D O I
10.1039/c6tc03447k
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Miniaturization of electronic devices to gain speed and reduce cost is no longer the only criterion for emerging technological needs. The devices with advanced functionalities such as flexibility, stretchability, transparency, and environmental robustness have significant advantages and added value in different areas for future electronics' applications. Data storage devices are one of the critical and fundamental components in fully integrated electronics. The functional resistive switching random access memory (RRAM) device, which is one of the most promising candidates for the next generation of non-volatile memory for data storage, has attracted immense attention because of its speed, ease of fabrication and scalability. In this paper, the recent progress, materials' selection, device architecture, and the emerging multi-functional RRAM devices are reviewed.
引用
收藏
页码:9637 / 9645
页数:9
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