Sputter-deposited metal contacts for n-type GaN

被引：6

作者：

Hall, HP ^{[1
]}

Awaah, MA ^{[1
]}

Das, K ^{[1
]}

机构：

[1] Tuskegee Univ, Dept Elect Engn, Tuskegee, AL 36088 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 02期

关键词：

D O I：

10.1088/0268-1242/19/2/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sputter-deposited An, Pt, Cr, Ni and Cu contacts for n-type GaN films were studied using current-voltage (I-V) and capacitance-voltage (C-V) measurements. These films were grown by molecular beam epitaxy (MBE), heteroepitaxially on the basal plane of sapphire. The contacts were non-ideally rectifying in nature. Assuming that the non-ideality was due to effects of series resistance and recombination current, a computer curve fitting procedure was employed that enabled the separation of these effects from the thermionic emission current, thereby permitting the calculation of the barrier height. An analysis of the results indicates that the barrier heights for metal contacts on GaN are determined by the difference between the metal and the semiconductor electronegativities and substantially influenced by metal induced gap states (MIGS)/sputtering damage induced surface states (SDISS). The concentration of metal induced gap states/sputtering induced damage states was determined to be approximately 2.7 x 10(13) states cm(-2) eV(-1).

引用

页码：176 / 182

页数：7

共 44 条

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