High Frequency Modeling and Parameter Extraction for Vertical-Cavity Surface Emitting Lasers

被引:28
作者
Gao, Jianjun [1 ]
机构
[1] E China Normal Univ, Sch Informat Sci & Technol, Shanghai 200062, Peoples R China
关键词
Device modeling; large model; parameter extraction; small signal model; vertical-cavity surface emitting laser (VCSEL); VCSELS;
D O I
10.1109/JLT.2012.2189870
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Accurate modeling and efficient parameter extraction of the equivalent circuit model of high-speed vertical-cavity surface emitting lasers (VCSELs) for high-frequency operation based on the rate equations are presented in this paper. The model is versatile in that it permits dc, small signal, and large signal to be performed, and can be easily on commercial circuit software. An analytical method, along with closed-form solution, to determine parasitic elements, intrinsic model parameters and rate equation model parameters of the VCSELs is developed and experimentally verified using on wafer measurement of electronic and optical performance. Modeled and measured results for the input reflection coefficients and modulation responses exhibit good agreement over a wide range of bias points under cutoff and above-threshold biased condition in the frequency range of 50 MHz-20 GHz for an oxide-confined AlGaAs VCSELs.
引用
收藏
页码:1757 / 1763
页数:7
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