Percolative Model and Thermodynamic Analysis of Oxygen-Ion-Mediated Resistive Switching

被引：20

作者：

Raghavan, Nagarajan ^{[1
]}

Pey, Kin Leong ^{[2
]}

Wu, Xing ^{[2
]}

Liu, Wenhu ^{[1
]}

Bosman, Michel ^{[3
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Div Microelect, Singapore 639798, Singapore

[2] Singapore Univ Technol & Design, Singapore 138682, Singapore

[3] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 05期

关键词：

Oxygen vacancy; percolation model; read voltage; reliability; resistive switching; soft breakdown (SBD); HIGH-K;

D O I：

10.1109/LED.2012.2187170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a statistical percolation model for retention lifetime assessment of resistive switching memory at the high-resistance state and correlate it to the soft breakdown phenomenon in ultrathin gate dielectrics. Electrical characterization in the low-resistance state shows that the location of oxygen-vacancy-based conductive filaments is almost randomly distributed and the trap generation rate across the oxide after reset transition is uniform. The constraints for the range of read voltages in the low and high conduction states, governed by the area of the device and the thermodynamics of oxygen ion transport, are presented.

引用

页码：712 / 714

页数：3

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