Ion beam mixing and thermal demixing of Co/Cu multilayers

被引:0
|
作者
Cai, M [1 ]
Veres, T [1 ]
Cochrane, RW [1 ]
Roorda, S [1 ]
Abdouche, R [1 ]
Sutton, M [1 ]
机构
[1] Univ Montreal, Dept Phys, Montreal, PQ H3C 3J7, Canada
关键词
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
X-ray reflectivity and magnetotransport studies have been used to probe the effects of ion-beam irradiation and subsequent thermal annealing on the structure and giant magnetoresistance (GMR) in Co/Cu multilayers. Low-dose ion bombardment produces interfacial mixing which is accompanied by a systematic suppression of the antiferromagnetic (AF) coupling and the GMR. For ion doses not exceeding 5 x 10(14) ions/cm(2), subsequent thermal annealing restores the abrupt interlayer structure as well as the GMR. The combination of low-dose ion bombardment and thermal annealing provides an ex situ technique to modify interface structure reversibly over a significant range.
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页码:197 / 202
页数:6
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