Negatively charged excitons in semiconductor quantum wells: effects of longitudinal electric and magnetic fields

被引：0
作者：
Dacal, LCO [1 ]
Brasil, MJSP [1 ]
Brum, JA [1 ]
机构：
[1] Univ Estadual Campinas, IFGW, DFMC, BR-13083970 Campinas, SP, Brazil
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of longitudinal electric and magnetic fields on the binding energy of the X- in Ga1-xAlxAs/GaAs quantum wells axe studied variationally using the configuration interaction picture with a non-orthogonal basis set.
引用
收藏
页码：463 / 464
页数：2
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