Negatively charged excitons in semiconductor quantum wells: effects of longitudinal electric and magnetic fields

被引：0

作者：

Dacal, LCO ^{[1
]}

Brasil, MJSP ^{[1
]}

Brum, JA ^{[1
]}

机构：

[1] Univ Estadual Campinas, IFGW, DFMC, BR-13083970 Campinas, SP, Brazil

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of longitudinal electric and magnetic fields on the binding energy of the X- in Ga1-xAlxAs/GaAs quantum wells axe studied variationally using the configuration interaction picture with a non-orthogonal basis set.

引用

页码：463 / 464

页数：2

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