Growth Kinetics Study of Pulsed Laser Deposited ZnO Thin Films on Si (100) Substrate

Surface morphology and kinetic roughness of ZnO thin films grown on Si(100) substrate for different time durations by pulsed laser deposition technique were analyzed using Atomic Force Microscopy images. Dynamic scaling approach was used for quantitatively analyzing the surface topology in terms of height difference correlation function G(r, t) and interface width w(t). Dynamic scaling approach is used to find roughness exponent alpha and growth exponent beta, which yields the values 0.67 and 0.49 respectively. This alpha value is in good agreement with the value predicted by surface diffusion driven model. However, value of growth exponent beta is higher than the model value. The deviation suggests anisotropy in film growth. X-ray diffraction data shows the preferential c-axis growth supporting deviation from the diffusion driven model.