CdS/Low-Band-Gap Kesterite Thin-Film Solar Cell Absorber Heterojunction: Energy Level Alignment and Dominant Recombination Process

被引：18

作者：

Baer, Marcus ^{[1
,2
]}

Schnabel, Thomas ^{[3
]}

Alsmeier, Jan-Hendrik ^{[1
]}

Krause, Stefan ^{[1
,4
]}

Koch, Norbert ^{[1
,4
]}

Wilks, Regan G. ^{[1
,2
]}

Ahlswede, Erik ^{[3
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie GmbH HZB, Renewable Energy, Hahn Meitner Pl 1, D-14109 Berlin, Germany

[2] Helmholtz Zentrum Berlin Mat & Energie GmbH, Energy Mat In Situ Lab Berlin EMIL, Albert Einstein Str 15, D-12489 Berlin, Germany

[3] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, Meitnerstr 1, D-70563 Stuttgart, Germany

[4] Humboldt Univ, Inst Phys, Newtonstr 15, D-12489 Berlin, Germany

来源：

ACS APPLIED ENERGY MATERIALS | 2018年 / 1卷 / 02期

基金：

欧盟地平线“2020”;

关键词：

thin-film solar cell; kesterite; energy level alignment; dominant recombination process; photoemission; CDSE; CU2ZNSN(S; SE)(4); DEPENDENCE; OFFSETS; SE;

D O I：

10.1021/acsaem.7b00071

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The chemical and electronic interface structure (including energy level alignment) between wet-chemical deposited CdS and low-band-gap Cu2ZnSn(S,Se)(4) (CZTSSe) thin-film solar cell absorbers was studied using direct and inverse photoemission. Complementarily, the activation energy (E-a) of the dominant charge carrier recombination process of related solar cell devices was derived by temperature-dependent current-voltage [I(V,T)] measurements. We find the CZTSSe surface to be free of any significant amount of sulfur and the formation of Cd-Se bonds at the interface. A small, positive ("spike"-like) conduction band offset of 0.21 +/- 0.28 eV between CZTSSe and CdS was measured. In conjunction with the I(V,T) derived E-a of 1.09 +/- 0.07 eV, which is in excellent agreement with the CZTSSe bulk band-gap energy of 1.07 eV, this reveals that high-rate charge carrier recombination at the CdS/CZTSSe interface can mainly be excluded as the performance-limiting factor in corresponding solar cells.

引用

页码：475 / 482

页数：15

共 45 条

[1]

[Anonymous], 2012, NIST XRAY PHOT SPECT

[2] Cliff-like conduction band offset and KCN-induced recombination barrier enhancement at the CdS/Cu2ZnSnS4 thin-film solar cell heterojunction [J].

Baer, M. ;

Schubert, B. -A. ;

Marsen, B. ;

Wilks, R. G. ;

Pookpanratana, S. ;

Blum, M. ;

Krause, S. ;

Unold, T. ;

Yang, W. ;

Weinhardt, L. ;

Heske, C. ;

Schock, H. -W. .

APPLIED PHYSICS LETTERS, 2011, 99 (22)

[3] Impact of KCN etching on the chemical and electronic surface structure of Cu2ZnSnS4 thin-film solar cell absorbers [J].

Baer, M. ;

Schubert, B. -A. ;

Marsen, B. ;

Krause, S. ;

Pookpanratana, S. ;

Unold, T. ;

Weinhardt, L. ;

Heske, C. ;

Schock, H. -W. .

APPLIED PHYSICS LETTERS, 2011, 99 (15)

[4] Zn-Se-Cd-S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface [J].

Baer, Marcus ;

Repins, Ingrid ;

Weinhardt, Lothar ;

Alsmeier, Jan-Hendrik ;

Pookpanratana, Sujitra ;

Blum, Monika ;

Yang, Wanli ;

Heske, Clemens ;

Wilks, Regan G. ;

Noufi, Rommel .

ACS ENERGY LETTERS, 2017, 2 (07) :1632-1640

[5] Cd2+/NH3 treatment-induced formation of a CdSe surface layer on CuGaSe2 thin-film solar cell absorbers -: art. no. 222107 [J].

Bär, M ;

Lehmann, S ;

Rusu, M ;

Grimm, A ;

Kötschau, I ;

Lauermann, I ;

Pistor, P ;

Sokoll, S ;

Schedel-Niedrig, T ;

Lux-Steiner, MC ;

Fischer, CH ;

Weinhardt, L ;

Heske, C ;

Jung, C .

APPLIED PHYSICS LETTERS, 2005, 86 (22) :1-3

[6] Is the Cu/Zn Disorder the Main Culprit for the Voltage Deficit in Kesterite Solar Cells? [J].

Bourdais, Stephane ;

Chone, Christophe ;

Delatouche, Bruno ;

Jacob, Alain ;

Larramona, Gerardo ;

Moisan, Camille ;

Lafond, Alain ;

Donatini, Fabrice ;

Rey, Germain ;

Siebentritt, Susanne ;

Walsh, Aron ;

Dennler, Gilles .

ADVANCED ENERGY MATERIALS, 2016, 6 (12)

[7]

Briggs D., 1990, Practical surface analysis, V2nd

[8] Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: First-principles insights [J].

Chen, Shiyou ;

Gong, X. G. ;

Walsh, Aron ;

Wei, Su-Huai .

APPLIED PHYSICS LETTERS, 2009, 94 (04)

[9] Temperature dependent current transport properties in Cu2ZnSnS4 solar cells [J].

Danilson, Mati ;

Kask, Erkki ;

Pokharel, Nikhil ;

Grossberg, Maarja ;

Kauk-Kuusik, Marit ;

Varema, Tiit ;

Krustok, Jueri .

THIN SOLID FILMS, 2015, 582 :162-165

[10] Influence of the thickness on structural, optical and electrical properties of chemical bath deposited CdS thin films [J].

Enríguez, JP ;

Mathew, X .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 76 (03) :313-322

← 1 2 3 4 5 →