Thermometry properties of Er, Yb-Gd2O2S microparticles: dependence on the excitation mode (cw versus pulsed excitation) and excitation wavelength (980 nm versus 1500 nm)
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作者:
Avram, Daniel
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Natl Inst Laser Plasma & Radiat Phys, POB MG-36, RO-76900 Bucharest, Romania
Univ Bucharest, Fac Phys, 405 Atomistilor St, Magurele Ilfov 077125, RomaniaNatl Inst Laser Plasma & Radiat Phys, POB MG-36, RO-76900 Bucharest, Romania
Avram, Daniel
[1
,2
]
Tiseanu, Carmen
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Natl Inst Laser Plasma & Radiat Phys, POB MG-36, RO-76900 Bucharest, RomaniaNatl Inst Laser Plasma & Radiat Phys, POB MG-36, RO-76900 Bucharest, Romania
Tiseanu, Carmen
[1
]
机构:
[1] Natl Inst Laser Plasma & Radiat Phys, POB MG-36, RO-76900 Bucharest, Romania
[2] Univ Bucharest, Fac Phys, 405 Atomistilor St, Magurele Ilfov 077125, Romania
Herein, we present a first report on the luminescence thermometry properties of Er, Yb doped Gd2O2S microparticles under near infrared up-conversion excitation at 980 and 1500 nm measured in the 280-800 K interval. The thermometry properties are assessed using both cw and ns pulsed excitation as well as tuning the excitation wavelength across Yb and Er absorption profiles. For low cw (300 mW cm(-1)) and pulsed ns (400 divided by 550 mW cm(-1)) excitation modes, no thermal load is observed. At room-temperature (280 K), the maximum relative sensitivity values are comparable under pulsed excitation at 980 and 1500 nm, around similar to 0.01 and similar to 0.008% K-1, respectively. In addition, a relative intense up-conversion emission at 980 nm under excitation at 1500 nm is measured. Our findings evidence attractive up-conversion and thermometry properties Er, Yb doped Gd2O2S under near-infrared excitation and highlight the need to explore further these properties in the nanoparticulate regime.
机构:
Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
Briggs, Justin A.
;
Atre, Ashwin C.
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Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
Atre, Ashwin C.
;
Dionne, Jennifer A.
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Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
机构:
Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
Briggs, Justin A.
;
Atre, Ashwin C.
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h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
Atre, Ashwin C.
;
Dionne, Jennifer A.
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机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAStanford Univ, Dept Appl Phys, Stanford, CA 94305 USA