Epitaxial growth of cubic SiC film on Si crystal with curved surface

3C-SiC films were epitaxially grown on a Si(100) substrate with a curved surface at 1000-1100 degrees C by the hydrogen plasma cosputtering of the Si and C targets. The entire surface of a Si(100) crystal was pyramided by KOH solution etching. The surface of pyramids on the crystal was curved by selecting the etching conditions. SiC films were grown on a curved surface of the Si substrate above 950 degrees C, and an (200)-oriented epitaxial growth of 3C-SiC was observed above 1000 degrees C. No hollow voids were formed at the SiC/Si inter-face at growth temperatures below 1075 degrees C. The formation of Si-C bonds was a thermally active reaction with an activation energy of 5.5eV below 1000 degrees C, which becomes 0eV in the epitaxial growth above 1000 degrees C. This small activation energy for the formation of Si-C bonds at a curved surface plays an important role in the prevention of hollow void formation at the SiC/Si interface.