Na distribution in Cu(In,Ga)Se2 thin films: Investigation by atom probe tomography

被引：17
作者：
Couzinie-Devy, F. [1 ,2 ,3 ]
Cadel, E. [1 ,2 ]
Barreau, N. [3 ]
Arzel, L. [3 ]
Pareige, P. [1 ,2 ]
机构：
[1] Univ Rouen, CNRS, GPM, UMR 6634, F-76801 St Etienne, France
[2] INSA Rouen, F-76801 St Etienne, France
[3] CNRS, Inst Mat Jean Rouxel IMN, UMR 6502, F-44322 Nantes 3, France
来源：
SCRIPTA MATERIALIA | 2015年 / 104卷
关键词：
Solar cells; Cu(In; Ga)Se-2; Atom probe tomography; Sodium; CUINSE2; CUIN1-XGAXSE2;
D O I：
10.1016/j.scriptamat.2015.03.028
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Atom probe tomography (APT) has been used to study the distribution of Na atoms in polycrystalline Cu(In,Ga)Se-2 (CIGSe) thin films. APT, which allows separate investigations of grain boundaries and grain interiors chemistry, shows the presence of inter- and intra-granular Na segregations. It is highlighted that these segregations are found associated to Cu-depletion and In-enrichment. The segregation of Na to crystalline point defects and extended ones is finally discussed regarding its impact on the electrical properties of CIGSe layers. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：83 / 86
页数：4
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