Electrons scattering processes in Al-Ga dilute alloys under low-temperature plastic deformation

被引：0
|
作者：
Demyanov, S
Drozd, A
Petrov, A
Petrovskii, M
机构：
[1] Institute of Solid State and Semiconductor Physics, Academy of Sciences of Belarus, 220092 Minsk
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1996年 / 46卷
关键词：
D O I：
10.1007/BF02570349
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Single crystal Al-Ga alloys with RRR in the range 7800-2100 were studied in temperature region 4.2-40 K and in magnetic fields up to 8T. From the data obtained the contributions to electrical resistivity and magnetoresistance of the alloys by lattice defects, which are introduced in the alloy during low-temperature plastic deformation, were analyzed. The analysis of electron-point defect and electron-dislocation scattering mechanisms evidenced the anisotropic character of the last one in strong magnetic fields.
引用
收藏
页码：2725 / 2726
页数：2
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