Numerical analysis of the influence of tilt of crucibles on interface shape and fields of temperature and velocity in the unidirectional solidification process

被引:37
作者
Miyazawa, Hiroaki [2 ]
Liu, Lijun [1 ,3 ]
Hisamatsu, Sho [2 ]
Kakimoto, Koichi [1 ,2 ]
机构
[1] Kyushu Univ, Res Inst Appl Math, Kasuga, Fukuoka 8168580, Japan
[2] Kyushu Univ, Grad Sch Engn, Kasuga, Fukuoka 8168580, Japan
[3] Xian Jiaotong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China
关键词
computer simulation; directional solidification; interfaces; growth from melt; solar cells;
D O I
10.1016/j.jcrysgro.2007.12.021
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We carried out calculations to investigate the influence of tilt of crucibles on the melt-crystal interface shape and fields of temperature and velocity of the melt and/or crystal by three-dimensional global and melt-crystal analyses. It was found that flow velocity was larger in the case of a fixed boundary condition of edge of the interface than that in the case of a relaxed condition. Furthermore, deflection of the interface with a fixed boundary condition was smaller than that without the fixed boundary condition. These results indicate that we should use three-dimensional global analysis with a relaxed boundary condition to investigate the influence of tilt of crucibles on the interface shape and flow velocity. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:1034 / 1039
页数:6
相关论文
共 13 条
  • [1] Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells
    Arafune, K
    Sasakia, T
    Wakabayashi, F
    Terada, Y
    Ohshita, Y
    Yamaguchi, M
    [J]. PHYSICA B-CONDENSED MATTER, 2006, 376 : 236 - 239
  • [2] The effect of interface shape on anisotropic thermal stress of bulk single crystal during Czochralski growth
    Chen, TC
    Wu, HC
    Weng, CI
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 173 (3-4) : 367 - 379
  • [3] Silicon ingot casting:: process development by numerical simulations
    Franke, D
    Rettelbach, T
    Hässler, C
    Koch, W
    Müller, A
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 72 (1-4) : 83 - 92
  • [4] Hirata H, 1988, J JPN ASS CRYST GROW, V15, P207
  • [5] Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for silicon solar cells
    Kuliev, A. T.
    Durnev, N. V.
    Kalaev, V. V.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 303 (01) : 236 - 240
  • [6] THE EFFECT OF INTERFACE SHAPE ON THERMAL-STRESS DURING CZOCHRALSKI CRYSTAL-GROWTH
    LAMBROPOULOS, JC
    DELAMETTER, CN
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 92 (3-4) : 390 - 396
  • [7] Three-dimensional global modeling of a unidirectional solidification furnace with square crucibles
    Liu, Lijun
    Nakano, Satoshi
    Kakimoto, Koichi
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 303 (01) : 165 - 169
  • [8] Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model
    Liu, LJ
    Kakimoto, K
    [J]. INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2005, 48 (21-22) : 4481 - 4491
  • [9] M'Hamdi M., 2005, P 20 EUR PHOT SOL EN, P1236
  • [10] Oxygen and lattice distortions in multicrystalline silicon
    Möller, HJ
    Funke, C
    Lawerenz, A
    Riedel, S
    Werner, M
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 72 (1-4) : 403 - 416