Numerical analysis of the influence of tilt of crucibles on interface shape and fields of temperature and velocity in the unidirectional solidification process

被引：37

作者：

Miyazawa, Hiroaki ^{[2
]}

Liu, Lijun ^{[1
,3
]}

Hisamatsu, Sho ^{[2
]}

Kakimoto, Koichi ^{[1
,2
]}

机构：

[1] Kyushu Univ, Res Inst Appl Math, Kasuga, Fukuoka 8168580, Japan

[2] Kyushu Univ, Grad Sch Engn, Kasuga, Fukuoka 8168580, Japan

[3] Xian Jiaotong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 06期

关键词：

computer simulation; directional solidification; interfaces; growth from melt; solar cells;

D O I：

10.1016/j.jcrysgro.2007.12.021

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We carried out calculations to investigate the influence of tilt of crucibles on the melt-crystal interface shape and fields of temperature and velocity of the melt and/or crystal by three-dimensional global and melt-crystal analyses. It was found that flow velocity was larger in the case of a fixed boundary condition of edge of the interface than that in the case of a relaxed condition. Furthermore, deflection of the interface with a fixed boundary condition was smaller than that without the fixed boundary condition. These results indicate that we should use three-dimensional global analysis with a relaxed boundary condition to investigate the influence of tilt of crucibles on the interface shape and flow velocity. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：1034 / 1039

页数：6

共 13 条

[1] Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells [J].

Arafune, K ;

Sasakia, T ;

Wakabayashi, F ;

Terada, Y ;

Ohshita, Y ;

Yamaguchi, M .

PHYSICA B-CONDENSED MATTER, 2006, 376 :236-239

[2] The effect of interface shape on anisotropic thermal stress of bulk single crystal during Czochralski growth [J].

Chen, TC ;

Wu, HC ;

Weng, CI .

JOURNAL OF CRYSTAL GROWTH, 1997, 173 (3-4) :367-379

[3] Silicon ingot casting:: process development by numerical simulations [J].

Franke, D ;

Rettelbach, T ;

Hässler, C ;

Koch, W ;

Müller, A .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 72 (1-4) :83-92

[4]

Hirata H, 1988, J JPN ASS CRYST GROW, V15, P207

[5] Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for silicon solar cells [J].

Kuliev, A. T. ;

Durnev, N. V. ;

Kalaev, V. V. .

JOURNAL OF CRYSTAL GROWTH, 2007, 303 (01) :236-240

[6] THE EFFECT OF INTERFACE SHAPE ON THERMAL-STRESS DURING CZOCHRALSKI CRYSTAL-GROWTH [J].

LAMBROPOULOS, JC ;

DELAMETTER, CN .

JOURNAL OF CRYSTAL GROWTH, 1988, 92 (3-4) :390-396

[7] Three-dimensional global modeling of a unidirectional solidification furnace with square crucibles [J].

Liu, Lijun ;

Nakano, Satoshi ;

Kakimoto, Koichi .

JOURNAL OF CRYSTAL GROWTH, 2007, 303 (01) :165-169

[8] Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model [J].

Liu, LJ ;

Kakimoto, K .

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2005, 48 (21-22) :4481-4491

[9]

M'Hamdi M., 2005, P 20 EUR PHOT SOL EN, P1236

[10] Oxygen and lattice distortions in multicrystalline silicon [J].

Möller, HJ ;

Funke, C ;

Lawerenz, A ;

Riedel, S ;

Werner, M .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 72 (1-4) :403-416

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