Alcohol-Mediated Resistance-Switching Behavior in Metal-Organic Framework-Based Electronic Devices

被引:81
作者
Liu, Yaqing [1 ]
Wang, Hong [1 ]
Shi, Wenxiong [1 ]
Zhang, Weina [2 ]
Yu, Jiancan [1 ]
Chandran, Bevita K. [1 ]
Cui, Chenlong [1 ]
Zhu, Bowen [1 ]
Liu, Zhiyuan [1 ]
Li, Bin [1 ]
Xu, Cai [1 ]
Xu, Zhiling [2 ]
Li, Shuzhou [1 ]
Huang, Wei [2 ]
Huo, Fengwei [2 ]
Chen, Xiaodong [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore
[2] Nanjing Tech Univ, Inst Adv Mat, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
chemically mediated memory; flexible devices; metal-organic frameworks; resistance switching; supramolecular chemistry; ZEOLITIC IMIDAZOLATE FRAMEWORKS; NONVOLATILE MEMORY DEVICES; RESISTIVE MEMORIES; TRANSISTORS; ADSORPTION; PLASTICITY; STORAGE; INFORMATION; MECHANISMS; MEMRISTORS;
D O I
10.1002/anie.201602499
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Metal-organic frameworks (MOFs) have drawn increasing attentions as promising candidates for functional devices. Herein, we present MOF films in constructing memory devices with alcohol mediated resistance switching property, where the resistance state is controlled by applying alcohol vapors to achieve multilevel information storage. The ordered packing mode and the hydrogen bonding system of the guest molecules adsorbed in MOF crystals are shown to be the reason for the alcohol mediated electrical switching. This chemically mediated memory device can be a candidate in achieving environment-responsive devices and exhibits potential applications in wearable information storage systems.
引用
收藏
页码:8884 / 8888
页数:5
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