Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO2 using parametric models

被引：4

作者：

Basa, P. ^{[1
]}

Petrik, P. ^{[1
]}

Fried, M. ^{[1
]}

Dana, A. ^{[2
]}

Aydinli, A. ^{[2
]}

Foss, S. ^{[3
]}

Finstad, T. G. ^{[3
]}

机构：

[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, POB 49, H-1525 Budapest, Hungary

[2] Bilkent Univ, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey

[3] Univ Oslo, Dept Phys, N-0316 Oslo, Norway

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 5 | 2008年 / 5卷 / 05期

关键词：

D O I：

10.1002/pssc.200777773

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ge-rich SiO2 layers on top of Si substrates were deposited using plasma enhanced chemical vapour deposition. Ge nanocrystals embedded in the SiO2 layers were formed by high temperature annealing. The samples were measured and evaluated by spectroscopic ellipsometry. Effective medium theory (EMT) and parametric semiconductor models have been used to model the dielectric function of the layers. Systematic dependences of the layer thickness and the oscillator parameters have been found on the annealing temperature (nanocrystal size).

引用

页码：1332 / +

页数：3

共 17 条

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