Size-dependent optical properties of Si nanocrystals embedded in amorphous SiO2 measured by spectroscopic ellipsometry

被引：9
作者：
Wei, J. [1 ]
Price, J. [1 ,2 ]
Wang, T. [3 ]
Hessel, C. [3 ]
Downer, M. C. [1 ]
机构：
[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA
[2] SEMATECH, Austin, TX 78741 USA
[3] Univ Texas Austin, Dept Chem Engn, Austin, TX 78712 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 04期
基金：
美国国家科学基金会;
关键词：
critical points; dielectric function; elemental semiconductors; ellipsometry; ion implantation; nanofabrication; nanoparticles; silicon; silicon compounds; spectral line shift; SILICON NANOCRYSTALS; DIELECTRIC FUNCTION; PHOTOLUMINESCENCE; TRANSITIONS;
D O I：
10.1116/1.3610967
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon nanocrystals (Si NCs) with average diameters < d(NC)>=3, 5 and 8 nm embedded in amorphous SiO2 synthesized by Si ion implantation have been characterized by spectroscopic ellipsometry. The dielectric function of the Si NCs has been extracted from SE data using a Bruggeman effective medium approximation and a Gauss-Lorentz oscillator model, taking into account the size dispersion of the nanoparticles. The dielectric function is found to depend strongly on average NC size. Although electronic critical point transitions of bulk silicon are discernible in NCs down to 3 nm diameter, the E-1 resonance weakens with decreasing NC size, nearly disappearing for 3 nm diameter, while the dominant E-2 transition blueshifts. In addition, a non-bulk-Si-like resonance intermediate between E-1 and E-2 is observed. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3610967]
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页数：4
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