Dysprosium silicide nanowires on Si(110)

被引：51

作者：

He, Z ^{[1
]}

Stevens, M

Smith, DJ

Bennett, PA

机构：

[1] Arizona State Univ, Sci & Engn Mat Program, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

[3] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 25期

关键词：

D O I：

10.1063/1.1636244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dysprosium deposited on Si(110) at 720 degreesC is observed to form self-assembled silicide nanowire (NW) structures with a single orientation and average dimensions of 15 nm wide and microns long. The NW sides grow into the substrate along inclined Si{111} planes, forming a V-shaped cross section with an interface that is coherent on one side, described by DySi2(0001)//Si(11 (1) under bar) and DySi2[01 (1) under bar0]//Si[(1) under bar 10], and incoherent on the other. This type of growth represents a physical mechanism for self-assembled NW formation that does not require anisotropic lattice mismatch. (C) 2003 American Institute of Physics.

引用

页码：5292 / 5294

页数：3

共 12 条

[1] Growth dynamics of titanium silicide nanowires observed with low-energy electron microscopy [J].

Bennett, PA ;

Ashcroft, B ;

He, Z ;

Tromp, RM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06) :2500-2504

[2] Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) [J].

Chen, Y ;

Ohlberg, DAA ;

Medeiros-Ribeiro, G ;

Chang, YA ;

Williams, RS .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :4004-4006

[3] Nanowires of four epitaxial hexagonal silicides grown on Si(001) [J].

Chen, Y ;

Ohlberg, DAA ;

Williams, RS .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) :3213-3218

[4] Epitaxial titanium silicide islands and nanowires [J].

He, ZA ;

Stevens, M ;

Smith, DJ ;

Bennett, PA .

SURFACE SCIENCE, 2003, 524 (1-3) :148-156

[5]

HE ZB, UNPUB

[6] Molecular electronics [J].

Heath, JR ;

Ratner, MA .

PHYSICS TODAY, 2003, 56 (05) :43-49

[7] A defect-tolerant computer architecture: Opportunities for nanotechnology [J].

Heath, JR ;

Kuekes, PJ ;

Snider, GS ;

Williams, RS .

SCIENCE, 1998, 280 (5370) :1716-1721

[8] High-temperature epitaxy of PtSi/Si(001) [J].

Kavanagh, KL ;

Reuter, MC ;

Tromp, RM .

JOURNAL OF CRYSTAL GROWTH, 1997, 173 (3-4) :393-401

[9] Gd disilicide nanowires attached to Si(111) steps [J].

McChesney, JL ;

Kirakosian, A ;

Bennewitz, R ;

Crain, JN ;

Lin, JL ;

Himpsel, FJ .

NANOTECHNOLOGY, 2002, 13 (04) :545-547

[10] Self-assembled rare-earth silicide nanowires on Si(001) [J].

Nogami, J ;

Liu, BZ ;

Katkov, MV ;

Ohbuchi, C ;

Birge, NO .

PHYSICAL REVIEW B, 2001, 63 (23)

← 1 2 →