Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode

被引：30

作者：

Chen, Tai-You ^{[1
]}

Chen, Huey-Ing ^{[2
]}

Liu, Yi-Jung ^{[1
]}

Huang, Chien-Chang ^{[1
]}

Hsu, Chi-Shiang ^{[1
]}

Chang, Chung-Fu ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2011年 / 155卷 / 01期

关键词：

AlGaN; Ammonia; Sensor; Schottky diode; METAL HYDROGEN SENSORS; SENSITIVITY; GAN;

D O I：

10.1016/j.snb.2010.11.022

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The interesting ammonia sensing current-voltage (I-V) characteristics of a Pt/AlGaN/GaN Schottky diode are firstly studied and demonstrated. It is found that the ammonia sensitivity is increased by increasing the temperature. Yet, the sensitivity is decreased when the temperature is higher than 423 K. Experimentally, the studied device exhibits a good sensitivity of 13.1 under exposing to a relatively low concentration ammonia gas of 35 ppm NH3/air. In addition, the good sensing performance of the studied device is demonstrated over a wide operating temperature regime from 298 K to 473 K. A highest ammonia sensing response of 182.7 is found at 423 K while a 10,000 ppm NH3/air gas is introduced. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.

引用

页码：347 / 350

页数：4

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