Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 μm

被引：1

作者：

Monte, AFG ^{[1
]}

Cunha, JFR

Soler, MAP

Silva, SW

Quivy, AA

Morais, PC

机构：

[1] Univ Brasilia, Inst Fis, Nucl Fis Aplicada, BR-70919970 Brasilia, DF, Brazil

[2] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil

来源：

MICROELECTRONICS JOURNAL | 2005年 / 36卷 / 3-6期

关键词：

quantum dots carrier transport; thermal redistribution; micro-photoluminescence;

D O I：

10.1016/j.mejo.2005.02.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the results of spatially resolved micro-photoluminescence on self-organized InAs/GaAs quantum dots. Our results suggest that carrier thermal redistribution is linked to the effects of carrier migration in these quantum dots. The higher migration length was observed at 150 K, making the higher carrier redistribution between the energy levels. (c) 2005 Published by Elsevier Ltd.

引用

页码：194 / 196

页数：3