Improvement of field emission performance on nitrogen ion implanted ultrananocrystalline diamond films through visualization of structure modifications

被引：10

作者：

Chen, Ying-Chieh ^{[1
,2
]}

Zhong, Xiao-Yan ^{[2
]}

Kabius, Bernd ^{[2
]}

Hiller, Jon M. ^{[2
]}

Tai, Nyan-Hwa ^{[1
]}

Lin, I. -Nan ^{[3
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60349 USA

[3] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan

来源：

关键词：

UNCD; Ion implantation; HRTEM;

D O I：

10.1016/j.diamond.2010.12.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The relationship between the electron field emission properties and structure of ultra-nanocrystalline diamond (UNCD) films implanted by nitrogen ions or carbon ions was investigated. The electron field emission properties of nitrogen-implanted UNCD films and carbon-implanted UNCD films were pronouncedly improved with respect to those of as-grown UNCD films, that is. the turn-on field decreased from 23.2 V/mu m to 12.5 V/mu m and the electron field emission current density increased from 10E-5 mA/cm(2) to 1 x 10E-2 mA/cm(2). The formation of a graphitic phase in the nitrogen-implanted UNCD films was demonstrated by Raman microscopy and cross-sectional high-resolution transmission electron microscopy. The possible mechanism is presumed to be that the nitrogen ion irradiation induces the structure modification (converting sp(3)-bonded carbons into sp(2)-bonded ones) in UNCD films. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：238 / 241

页数：4

共 21 条

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