Multi-scale micro-nano structures prepared by laser cleaning assisted laser ablation for broadband ultralow reflectivity silicon surfaces in ambient air

被引:50
作者
Chen, Tong [1 ,2 ]
Wang, Wenjun [1 ,2 ]
Tao, Tao [1 ,2 ]
Pan, Aifei [1 ,2 ]
Mei, Xuesong [1 ,2 ]
机构
[1] Xi An Jiao Tong Univ, State Key Lab Mfg Syst Engn, Xian 710054, Shaanxi, Peoples R China
[2] Shaanxi Key Lab Intelligent Robot, Xian 710054, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
Broadband; Ultralow reflectance; Micro-nano structures; Laser ablation; Oxide deposition; Laser cleaning; BLACK SILICON; MICROSTRUCTURED SILICON; NANOSTRUCTURES; FABRICATION;
D O I
10.1016/j.apsusc.2019.145182
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
To meet the ultra-broadband perfect absorption of visible-infrared light on silicon surfaces, a green, efficient and economical method for fabricating mull-scale micro-nano composite structures in ambient air is proposed. We experimentally demonstrate laser cleaning assisted femtosecond laser ablation for fabricating anti-reflection structures. Laser cleaning technology not only effectively eliminates oxide deposition on the laser textured surfaces, but also manufactures the small scale fine-microstructures and nanostructures. A focused ellipse laser spot is innovatively applied to realize large area and energy decays continuously multiple laser cleaning of laser-treated surfaces, and solve the problem that new oxide deposition is generated in the cleaning process. The processing efficiency is also increased by 4.8 times. The average reflectance of 2.06% is reached from 300 to 2500 nm. Great enhancement of infrared light absorption of silicon from 2.5 to 16 pm is realized experimentally. The average reflectance is reduced to 4.98% with a broadband reflectance below 6.6%. Especially, a reflectance below 5.0% from 2.5 to 10 pm and an average reflectance of 4.3% is achieved, which is the least reported to date by laser processing techniques as far as we know. This strategy for anti-reflection structures is excellent candidate for future optoelectronic devices.
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页数:8
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