Fabrication of the hybrid ZnO LED structure grown on p-type GaN by metal organic chemical vapor deposition

LEDs based on the n-ZnO/p-GaN heterojunction were successfully fabricated with the top/middle/bottorn layer sequence of ZnO/ ZnO nanorods/p-GaN by continuously controlling the growth parameters via metal organic chemical vapor deposition. The ZnO top layer was deposited as a contact layer for the application of nanorods as an active layer, while p-GaN was used as a p-type layer, instead of p-ZnO. The ZnO film grown on ZnO nanorods with high crystalline quality on GaN exhibited the epitaxial properties of a single domain. The light-emitting device fabricated using this hybrid structure demonstrated a forward turn-on voltage of 11 V and a high reverse current, which require further development for device fabrication. (c) 2007 Elsevier B.V. All rights reserved.